Abstract

CuInSe₂ (CIS) films were obtained on annealing of 280 nm and 775 nm thick Cu/In/Se stacks deposited on corning glass substrate. The stacked elemental layer deposition (SELD) technique was used for the deposition of the films of Se, In and Cu layers. The as-deposited and annealed samples were found to possess polycrystalline structures. The films provided dominating CIS phase along with secondary phases of Cu₁₁In₉, CuSe and Se. The secondary phases present in the films vary with change in annealing temperatures. Moreover, single CuInSe₂ phase is observed in the 280 nm films at 523 K. The scanning electron microscopic images of the samples show nano-rod type structures of CIS grains. The elemental composition of Cu:In:Se approaches 1:1:2 in 280 nm thick samples. The ratio, however, deviates in the 775 nm thick films. The Raman spectra of these samples give A₁ mode at 173 cm⁻¹ and confirm the presence of CIS phase. The films exhibit slow increase in the band gap (E_g) values from 1.09 to 1.22 eV for 775 films. However, comparatively higher band gap (E_g) values from 1.25 to 1.90 eV are observed for 280 nm films with high absorption co-efficient (α ~ 10⁵ cm⁻¹) values. The films present more useful electrical parameters for 280 nm thick samples as compared to 775 nm samples due to dominated CIS phase. Thus, obtained CIS thin films of 280 nm thickness provide viable alternative as an absorber layer in solar cell structure.

中文翻译：

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SELD法开发CuInSe 2薄膜在光伏吸收层中的应用

摘要

CuInSe ₂（CIS）薄膜是通过对位于康宁玻璃基板上的280 nm和775 nm厚的Cu / In / Se叠层进行退火获得的。堆叠的元素层沉积（SELD）技术用于沉积Se，In和Cu层的膜。发现沉积和退火的样品具有多晶结构。所述膜提供了主要的CIS相以及Cu ₁₁ In ₉，CuSe和Se的次级相。薄膜中存在的次级相随退火温度的变化而变化。此外，单CuInSe ₂在523nm下在280nm的薄膜中观察到相。样品的扫描电子显微镜图像显示了CIS晶粒的纳米棒型结构。在280 nm厚的样品中，Cu：In：Se的元素组成接近1：1：2。然而，该比例在775nm厚的膜中有偏差。这些样品的拉曼光谱在173cm ^-1处给出A ₁模式，并证实了CIS相的存在。对于775个膜，这些膜的带隙（E _g）值从1.09到1.22 eV缓慢增加。然而，相对高的带隙（Ë_克）值在1.25至1.90 eV的被观察到280nm处的膜具有高的吸收合作效率（α  〜10 ⁵ 厘米^-1）值。由于占主导地位的CIS相，与775 nm样品相比，该膜对280 nm厚度的样品表现出更有用的电参数。因此，获得的280nm厚的CIS薄膜提供了可行的替代方案作为太阳能电池结构中的吸收层。