Abstract

In this study, copper sulfide (CuS) semiconductor material is combined with a polyvinyl alcohol (PVA) polymer to synthesize a hybrid organic/inorganic thin film, due to their respective intrinsic properties and extensive array of applications in optical and electrical devices. The PVA organic polymer was mixed with three different concentrations of CuS powder (0.002 g, 0.02 g, and 0.2 g), to determine the thickness of emissive layer for light-emitting applications. The structural, morphological, electrical, optical, and photoluminescence (PL) properties of the thin films were examined. The PVA/CuS thin films synthesized from CuS concentration of 0.2 g exhibited the largest grain size (37.3 nm), the highest thickness (17.48 μm), surface roughness (94.6 nm), conductivity (2.8 Ω cm, 7.55 × 10³ cm²/V s, and 1.48 × 10¹⁴/cm³), the lowest bandgap (3.59 eV) and the strongest emission bands. Thus, concentration of the precursor CuS material influences the structural, morphological, electrical, optical, and photoluminescence properties of organic/inorganic thin films. In addition, FTIR and PL spectra confirmed the miscibility/bonding of PVA polymer with CuS semiconductor material and exhibited the emission bands of the films, respectively.

中文翻译：

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CuS粉末浓度对聚合物发光应用PVA / CuS杂化薄膜结构的影响

摘要

在这项研究中，硫化铜（CuS）半导体材料与聚乙烯醇（PVA）聚合物结合以合成有机/无机杂化薄膜，这是由于它们各自的固有特性以及在光学和电气设备中的广泛应用。将PVA有机聚合物与三种不同浓度的CuS粉末（0.002 g，0.02 g和0.2 g）混合，以确定发光应用的发光层厚度。检查了薄膜的结构，形态，电学，光学和光致发光（PL）特性。以0.2 g的CuS浓度合成的PVA / CuS薄膜具有最大的晶粒尺寸（37.3 nm），最大的厚度（17.48μm），表面粗糙度（94.6 nm），电导率（2.8Ωcm，7.55×10 ³  cm ²/ V s和1.48×10 ¹⁴ / cm ³），最低带隙（3.59 eV）和最强发射带。因此，前驱体CuS材料的浓度会影响有机/无机薄膜的结构，形态，电学，光学和光致发光性能。此外，FTIR和PL光谱证实了PVA聚合物与CuS半导体材料的可混溶性/键合性，并分别显示了薄膜的发射带。