The long-standing interest in graphene has recently brought graphene-derived materials including graphene hydrogel, graphene fiber and graphene paper into sharp focus. These graphene-derived materials show outstanding properties in mechanics and physics. In this paper, for the first time, we demonstrate the novel synthesis of graphene dendrites on SiO2/Si substrates by chemical vapor deposition. The tree-like graphene dendrites with well-controlled morphology can be directly grown on both the Si and the SiO2 surfaces of the substrates by using methane and hydrogen as precursors. The graphene dendrites on SiO2/Si substrates can be directly used in the fabrication of the electronic device. The conductivity and the Hall mobility of graphene dendrites are ~ 286 Scm-1 and ~ 574 cm2(Vs)-1, respectively. Young's modulus of graphene dendrites is up to 2.26 GPa. The developed method avoids the need for a metal substrate and is scalable and compatible with the existing semiconductor technology, making graphene dendrites be very promising in nanoelectronic applications.

中文翻译：

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通过化学气相沉积法在SiO2 / Si衬底上直接合成石墨烯枝晶。

对石墨烯的长期关注最近使包括石墨烯水凝胶，石墨烯纤维和石墨烯纸在内的石墨烯衍生材料成为人们关注的焦点。这些石墨烯衍生的材料在力学和物理学上显示出出色的性能。在本文中，我们首次展示了通过化学气相沉积法在SiO2 / Si衬底上新颖合成石墨烯树枝状晶体的方法。通过使用甲烷和氢气作为前体，可以将具有良好形态的树状石墨烯树枝状晶体直接生长在基板的Si和SiO2表面上。SiO2 / Si衬底上的石墨烯树枝状晶体可直接用于电子设备的制造中。石墨烯树枝状晶体的电导率和霍尔迁移率分别为〜286 Scm-1和〜574 cm2（Vs）-1。年轻' 石墨烯树枝状晶体的s模量高达2.26 GPa。所开发的方法避免了对金属衬底的需求，并且可扩展并且与现有的半导体技术兼容，使得石墨烯树枝状晶体在纳米电子应用中非常有前途。