The radiation response, long-term performance, and reliability of HfO₂-based gate dielectric materials play a critical role in metal oxide semiconductor (MOS) technology for space device applications. Al/HfO₂/Si atomic layer-deposited devices were irradiated by gamma and swift heavy ions. An increase in the leakage current and charge trapping has been observed as the gamma irradiation dose varied from 25 to 100 krad. The density of oxide traps is found to increase with an increase in the gamma dose while the interface trap density is found to decrease. Another set of samples were irradiated by 120 MeV Au ions to study the SHI-induced defect annealing/creation of defects and intermixing effects in HfO₂/Si-based devices. The formation of an interfacial layer of HfSiO at a fluence of at 5 × 10¹³ cm⁻² is revealed by X-ray reflectivity analysis. The densities of interface- and oxide-trapped charges are found to decrease up to a critical fluence of 1 × 10¹² cm⁻² and then increase with further increase in fluence to 5 × 10¹³ cm⁻². The presence of the interlayer, due to the swift heavy ion-induced intermixing, has been confirmed by X-ray photoelectron spectroscopy measurements. Various current conduction mechanisms in both substrate and gate injection cases were used to understand the basic mechanisms of direct, Fowler–Nordheim, and Poole–Frenkel tunneling, as well as Schottky emission in these devices. These studies elucidated the radiation tolerance and charge-trapping behavior of Al/HfO₂/Si nMOS capacitors.

中文翻译：

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ALD生长的Al / HfO 2 / Si nMOSCAP的耐辐射性，电荷俘获和缺陷动力学研究

基于HfO ₂的栅介电材料的辐射响应，长期性能和可靠性在空间设备应用的金属氧化物半导体（MOS）技术中起着至关重要的作用。Al / HfO ₂ / Si原子层沉积器件被γ和快速重离子辐照。随着伽马辐照剂量从25到100 krad变化，已观察到泄漏电流和电荷俘获的增加。发现氧化物陷阱的密度随着伽马剂量的增加而增加，而发现界面陷阱的密度降低。另一组样品用120 MeV Au离子辐照，以研究SHI诱导的缺陷退火/缺陷的形成以及HfO _2中的混合效应基于/ Si的设备。通过X射线反射率分析揭示以5×10 ¹³  cm ^-2的注量形成HfSiO的界面层。发现界面电荷和氧化物陷阱电荷的密度降低到1×10 ¹²  cm ^-2的临界通量，然后随着通量的进一步增加而增加到5×10 ¹³  cm ^-2。。X射线光电子能谱测量已经证实了由于迅速的重离子诱导的混合而导致的中间层的存在。在衬底注入和栅极注入两种情况下，各种电流传导机制都被用来理解直接，Fowler-Nordheim和Poole-Frenkel隧穿的基本机制，以及这些器件中的肖特基发射。这些研究阐明了Al / HfO ₂ / Si nMOS电容器的耐辐射性和电荷陷阱行为。