The disordering process in crystalline GeSb 2 Te 4 films has been studied by means of ion irradiation with 150 keV Ar + ions. The effect of the interfaces and the role of the crystal microstructure has been investigated. The disordering path observed in a randomly oriented polycrystalline material with trigonal structure involves the transition to the disordered rocksalt structure (at fluence 7 × 10 13 cm −2 ) and then to the amorphous phase (at 1.5 × 10 14 cm −2 ). In GeSb 2 Te 4 epitaxially grown on Si(1 1 1) the formation of the disordered rocksalt phase (DRS) occurs at much higher fluence (3 × 10 14 cm −2 ) and it is preceded by the conversion of the stable phase into the ordered rocksalt structure (at 5 × 10 13 cm −2 ), with the formation of ordered vacancy layers, associated to a local variation of the stoichiometry. Even by increasing the flu...

中文翻译：

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离子辐照引起的GeSb 2 Te 4的无序过程

已经通过用150 keV Ar +离子进行离子辐照研究了晶体GeSb 2 Te 4薄膜中的无序过程。已经研究了界面的作用和晶体微结构的作用。在具有三角形结构的随机取向的多晶材料中观察到的无序路径涉及到过渡到无序的岩盐结构（注量为7×10 13 cm -2），然后过渡到非晶相（在1.5×10 14 cm -2）。在Si（1 1 1）上外延生长的GeSb 2 Te 4中，无序岩盐相（DRS）的形成以更高的通量（3×10 14 cm -2）发生，并且先由稳定相转变为有序的岩石盐结构（5×10 13 cm -2），形成有序的空位层，与化学计量的局部变化相关。