Abstract New perspective 1.4 nm thick spin-polarized triple heterostructures based on graphene sandwiched between two vanadium ditelluride monolayers (VTe2/graphene/VTe2) were studied using ab initio DFT technique. Both possible trigonal prismatic (H-VTe2) and octahedral (T-VTe2) VTe2 phases were considered to design and study graphene-based heterostructures. It was shown that the interaction with graphene changes the electronic structure of 2D T-VTe2 from metallic to half-metallic, making T phase perspective to be used for magnetic tunnel junctions. The electronic subsystem of graphene fragment is slightly hole doped. Calculated tunnel magnetoresistance ratio for the favorable heterostructure configuration estimated within the Julliere model is 220%, which opens a way to use VTe2/graphene/VTe2 as prospective magnetic tunnel junction in novel spintronic nanodevices based on tunnel magnetic resistance and spin transfer torque effects.

中文翻译：

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三重VTe2/石墨烯/VTe2异质结构作为透视磁隧道结

摘要 使用 ab initio DFT 技术研究了基于夹在两个二碲化钒单层 (VTe2/graphene/VTe2) 之间的石墨烯的 1.4 nm 厚自旋极化三异质结构的新视角。可能的三棱柱 (H-VTe2) 和八面体 (T-VTe2) VTe2 相都被考虑用于设计和研究基于石墨烯的异质结构。结果表明，与石墨烯的相互作用将 2D T-VTe2 的电子结构从金属转变为半金属，使 T 相透视可用于磁隧道结。石墨烯碎片的电子子系统是轻微的空穴掺杂。在 Julliere 模型中估计的有利异质结构配置的计算隧道磁阻比为​​ 220%，