Abstract The boundary structure of 2D materials exhibits an important influence on their physical and chemical properties. We report the controllable growth of molybdenum disulfide with different boundary structures via chemical vapor deposition (CVD). A facile and rigorous route to distinguish the boundary structure via oxygen etching was proposed. The boundary control was realized by changing the substrate height to adjust the Mo:S ratios. Based on the stability differences of the boundary structures in oxygen, the microscopic boundary structures were characterized by oxygen etching. Our work combined growth and etching to develop a general route to identify the boundary structure of MoS2. Results of this study provide a mean to determine the controllable growth of MoS2 domains with different boundaries and to design the domains with special boundary structure efficiently.

中文翻译：

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通过氧蚀刻区分单层 MoS2 域的边界结构的简便而严格的途径

摘要 二维材料的边界结构对其物理和化学性质具有重要影响。我们通过化学气相沉积 (CVD) 报告了具有不同边界结构的二硫化钼的可控生长。提出了一种通过氧蚀刻区分边界结构的简便而严格的途径。边界控制是通过改变基板高度来调整 Mo:S 比率来实现的。根据边界结构在氧气中的稳定性差异，通过氧刻蚀对微观边界结构进行表征。我们的工作结合了生长和蚀刻，以开发出识别 MoS2 边界结构的一般途径。