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High and Temperature‐Independent Dielectric Constant Dielectrics from PVDF‐Based Terpolymer and Copolymer Blends
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-01-16 , DOI: 10.1002/aelm.201901250 Damien Thuau 1 , Konstantinos Kallitsis 2 , Sara Ha 2 , François Bargain 3 , Thibaut Soulestin 4 , Gilles Pecastaings 2 , Sylvie Tencé‐Girault 3, 5 , Fabrice Domingues Dos Santos 4 , Georges Hadziioannou 2
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-01-16 , DOI: 10.1002/aelm.201901250 Damien Thuau 1 , Konstantinos Kallitsis 2 , Sara Ha 2 , François Bargain 3 , Thibaut Soulestin 4 , Gilles Pecastaings 2 , Sylvie Tencé‐Girault 3, 5 , Fabrice Domingues Dos Santos 4 , Georges Hadziioannou 2
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Relaxor ferroelectric polymers exhibit high k at their structural phase transition around room temperature. They are particularly attractive as gate dielectric in organic field effect transistor (OFET). Nevertheless, their applications are limited due to their low thermal stability. A polymer blend system with a high and thermally stable dielectric constant is demonstrated by mixing terpolymer poly(vinylidene fluoride‐trifluoroethylene‐chlorofluorethylene) P(VDF‐ter‐TrFE‐ter‐CFE) with copolymer poly(vinylidene fluoride‐trifluoroethylene) P(VDF‐co‐TrFE). PVDF‐based blends of various compositions are characterized by dielectric spectroscopy, differential scanning calorimetry (DSC), infrared spectroscopy, small and wide angle X‐ray scattering (SAXS and WAXS), and atomic force microscopy (AFM) in order to investigate the relationship between morphology and crystallization of the blend and their dielectric properties. An optimized blend of P(VDF‐ter‐TrFE‐ter‐CFE) [55/37/8] and P(VDF‐co‐TrFE) [46/54] at a ratio of 70/30 is found to exhibit a quasi‐constant dielectric constant of 40 ± 2 over a wide temperature range (20–80 °C). Furthermore, electrical characteristics of the PVDF‐blend‐based gate dielectric OFET show further thermal stability in comparison to OFET based on high‐k terpolymer P(VDF‐ter‐TrFE‐ter‐CFE) [55/37/8]. An improvement of their drain current stability by up to 60% is demonstrated at 60 °C. These findings enable broader applications of fluoropolymers in organic electronics.
中文翻译：
基于PVDF的三元共聚物和共聚物混合物的介电常数和介电常数
弛豫铁电聚合物在室温附近的结构相变中表现出高k。它们作为有机场效应晶体管（OFET）中的栅极电介质特别有吸引力。然而，由于其低的热稳定性，它们的应用受到限制。通过将三元共聚物聚（偏二氟乙烯-三氟乙烯-氯氟乙烯）P（VDF- ter- TrFE- ter- CFE）与共聚物聚（偏二氟乙烯-三氟乙烯）P（VDF）混合来证明具有高且热稳定介电常数的聚合物共混体系-合作‐TrFE）。基于PVDF的各种成分的共混物的特征在于介电光谱，差示扫描量热法（DSC），红外光谱，小和广角X射线散射（SAXS和WAXS）以及原子力显微镜（AFM），以研究这种关系共混物的形态和结晶及其介电性能之间的关系。P的最佳混合物（VDF-叔-TrFE-叔-CFE）[55/37/8]和P（VDF- CO -TrFE）[46/54]以70/30的比率被发现表现出准-在较宽的温度范围（20–80°C）中为40±2的恒定介电常数。此外，与基于高k三元共聚物P（VDF-）的OFET相比，基于PVDF-混合的栅极电介质OFET的电气特性显示出更高的热稳定性。ter‐ TrFE‐ ter‐ CFE）[55/37/8]。在60°C时，其漏极电流稳定性提高了60％。这些发现使得含氟聚合物能够在有机电子产品中得到更广泛的应用。
更新日期：2020-03-09
中文翻译：
基于PVDF的三元共聚物和共聚物混合物的介电常数和介电常数
弛豫铁电聚合物在室温附近的结构相变中表现出高k。它们作为有机场效应晶体管（OFET）中的栅极电介质特别有吸引力。然而，由于其低的热稳定性，它们的应用受到限制。通过将三元共聚物聚（偏二氟乙烯-三氟乙烯-氯氟乙烯）P（VDF- ter- TrFE- ter- CFE）与共聚物聚（偏二氟乙烯-三氟乙烯）P（VDF）混合来证明具有高且热稳定介电常数的聚合物共混体系-合作‐TrFE）。基于PVDF的各种成分的共混物的特征在于介电光谱，差示扫描量热法（DSC），红外光谱，小和广角X射线散射（SAXS和WAXS）以及原子力显微镜（AFM），以研究这种关系共混物的形态和结晶及其介电性能之间的关系。P的最佳混合物（VDF-叔-TrFE-叔-CFE）[55/37/8]和P（VDF- CO -TrFE）[46/54]以70/30的比率被发现表现出准-在较宽的温度范围（20–80°C）中为40±2的恒定介电常数。此外，与基于高k三元共聚物P（VDF-）的OFET相比，基于PVDF-混合的栅极电介质OFET的电气特性显示出更高的热稳定性。ter‐ TrFE‐ ter‐ CFE）[55/37/8]。在60°C时，其漏极电流稳定性提高了60％。这些发现使得含氟聚合物能够在有机电子产品中得到更广泛的应用。
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