Van der Waals Heterostructures with Tunable Tunneling Behavior Enabled by MoO3 Surface Functionalization,Advanced Optical Materials

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Van der Waals Heterostructures with Tunable Tunneling Behavior Enabled by MoO3 Surface Functionalization
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2020-01-17 , DOI: 10.1002/adom.201901867
Yanan Wang ₁ , Du Xiang ₂ , Yue Zheng ₁ , Tao Liu ₂ , Xin Ye ₂ , Jing Gao ₁ , Hang Yang ₁ , Cheng Han ₃ , Wei Chen _{1,

2,

4,

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Affiliation

Heterostructures of 2D materials represent a powerful material platform that has essentially defined the technological foundation for all modern electronic and optoelectronic devices. Although most of the reported heterostructures devices exhibit extraordinary electronic and optoelectronic properties, they depend on the proper combination of selected materials, which limits the broad tunability of the devices. Herein, it is demonstrated that a vertical van der Waals heterostructures (vdWHs) device, which is composed of MoS₂ and MoTe₂, can function as a backward tunneling diode, photovoltaic cell, and photodetector through surface functionalization of MoO₃. The realization of this backward tunneling diode is attributed to the band alignment variation from type II to type III via in situ MoO₃ functionalization. Furthermore, the power conversion efficiency of this vdWHs based photovoltaic device is significantly enhanced by nearly four times, benefiting from the more efficient photocarrier separation after MoO₃ decoration. The enhanced photovoltaic effect can be retained even after air exposure, revealing the excellent air stability. Meanwhile, the modified vdWHs device exhibits the photodetecting property with photocurrent responsivity of around 2 A W⁻¹ and external quantum efficiency about 400%. This work promises surface functionalization as an effective approach to broaden the device functionality of 2D heterostructures in electronics and optoelectronics.

中文翻译：

通过MoO3表面功能化实现具有可调隧穿行为的Van der Waals异质结构

2D材料的异质结构代表了一个强大的材料平台，该平台实质上已定义了所有现代电子和光电设备的技术基础。尽管大多数报道的异质结构器件都具有非凡的电子和光电性能，但它们取决于所选材料的正确组合，这限制了器件的广泛可调性。本文证明了由MoS ₂和MoTe ₂组成的垂直范德华异质结构（vdWHs）器件可以通过MoO _3的表面功能化用作反向隧穿二极管，光伏电池和光电探测器。该反向隧穿二极管的实现归因于通过原位MoO ₃官能化从II型到III型的能带对准变化。此外，得益于MoO ₃装饰后更有效的光载流子分离，该基于vdWHs的光伏器件的功率转换效率显着提高了近四倍。即使暴露在空气中也可以保留增强的光伏效应，从而显示出极好的空气稳定性。同时，改进的vdWHs器件表现出光检测特性，光电流响应度约为2 AW ^-1外部量子效率约为400％。这项工作有望将表面功能化作为一种有效的方法来扩展电子和光电子学中2D异质结构的设备功能。

更新日期：2020-04-06

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