Resistive random-access memory (ReRAM) with the crossbar structure is one promising candidate to be used as a next generation non-volatile memory device. In a crossbar ReRAM, in which a memristor is positioned on each row-column intersection, the sneak-path problem is one of the main challenges for a reliable readout. The sneak-path problem can be solved with additional selection devices. When some selection devices fail short, the sneak-path problem re-occurs. The re-occurred sneak-path problem is addressed in this paper. The re-occurred sneak-path event can be described combinatorially and its adverse effect can be modeled as a parallel interference. Based on a simple pilot construction, we probabilistically characterize the inter-cell dependency of the re-occurred sneak-path events. Utilizing this dependency, we propose adaptive thresholding schemes for resistive memory readout using side information provided by pilot cells. This estimation theoretic approach effectively reduces the bit-error rate while maintaining low redundancy overhead and low complexity.

中文翻译：

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飞行员辅助自适应阈值，用于在选择设备失败的阻性存储器中缓解潜行路径

具有交叉结构的电阻式随机存取存储器 (ReRAM) 是一种很有前途的候选者，可用作下一代非易失性存储设备。在交叉式 ReRAM 中，忆阻器位于每个行列交叉点上，潜路径问题是可靠读出的主要挑战之一。可以使用额外的选择设备解决潜行路径问题。当某些选择设备出现故障时，会再次出现潜行路径问题。本文解决了再次发生的潜行路径问题。再次发生的潜行路径事件可以组合描述，其不利影响可以建模为并行干扰。基于一个简单的引导结构，我们概率性地表征了重新发生的潜行路径事件的小区间依赖性。利用这个依赖，我们使用导频单元提供的辅助信息提出了用于电阻性存储器读出的自适应阈值方案。这种估计理论方法有效地降低了误码率，同时保持了低冗余开销和低复杂度。