Pt/BiFeO3/SrRuO3/SrTiO3 heterostructures with significant resistive switching characteristics have been successfully fabricated via magnetron sputtering, and the effect of thicknesses and deposition temperatures on the resistive switching properties has also been investigated. The resistive behaviors and conduction mechanisms can be modulated by the thickness and deposition temperatures of bismuth ferrite perovskite oxide (BFO) films. BFO films with a smaller thickness of 80 nm and higher deposition temperature of 670 °C show larger memory window over 1000 and lower switching voltage below 1.5 V. Moreover, the conduction mechanisms of Pt/BiFeO3/SrRuO3/SrTiO3 resistive cell change from the space charge-limited conduction model to the conductive filament type with the decrease of BFO film thickness possibly due to more oxygen vacancies and defects. Furthermore, oxygen partial pressure also influences the memory window and conduction mechanism of BFO resistive cells by increasing or decreasing the oxygen vacancy defects in BFO films.

中文翻译：

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沉积温度和厚度对 BiFeO3 薄膜电阻转换的影响

Pt/BiFeO3/SrRuO3/SrTiO3 异质结构具有显着的电阻开关特性已经通过磁控溅射成功制造，并且还研究了厚度和沉积温度对电阻开关特性的影响。电阻行为和传导机制可以通过铋铁氧体钙钛矿氧化物 (BFO) 薄膜的厚度和沉积温度进行调节。具有 80 nm 较小厚度和 670 °C 更高沉积温度的 BFO 薄膜显示出超过 1000 的更大存储窗口和低于 1.5 V 的更低开关电压。 此外，Pt/BiFeO3/SrRuO3/SrTiO3 电阻电池的导电机制从空间变化由于更多的氧空位和缺陷，随着 BFO 膜厚度的减小，导电丝类型的电荷限制传导模型。