Superior polarization retention through engineered domain wall pinning.,Nature Communications

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Superior polarization retention through engineered domain wall pinning.
Nature Communications ( IF 14.7 ) Pub Date : 2020-01-17 , DOI: 10.1038/s41467-019-14250-7
Dawei Zhang ₁ , Daniel Sando _{1,

2,

3} , Pankaj Sharma _{1,

2} , Xuan Cheng ₄ , Fan Ji _{1,

2} , Vivasha Govinden _{1,

2} , Matthew Weyland _{4,

5} , Valanoor Nagarajan _{1,

2} , Jan Seidel _{1,

2}

Affiliation

Ferroelectric materials possess a spontaneous polarization that is switchable by an electric field. Robust retention of switched polarization is critical for non-volatile nanoelectronic devices based on ferroelectrics, however, these materials often suffer from polarization relaxation, typically within days to a few weeks. Here we exploit designer-defect-engineered epitaxial BiFeO3 films to demonstrate polarization retention with virtually no degradation in switched nanoscale domains for periods longer than 1 year. This represents a more than 2000% improvement over the best values hitherto reported. Scanning probe microscopy-based dynamic switching measurements reveal a significantly increased activation field for domain wall movement. Atomic resolution scanning transmission electron microscopy indicates that nanoscale defect pockets pervade the entire film thickness. These defects act as highly efficient domain wall pinning centres, resulting in anomalous retention. Our findings demonstrate that defects can be exploited in a positive manner to solve reliability issues in ferroelectric films used in functional devices.

中文翻译：

通过设计的畴壁钉扎实现卓越的偏振保持。

铁电材料具有可通过电场切换的自发极化。开关极化的稳健保持对于基于铁电体的非易失性纳米电子器件至关重要，然而，这些材料通常会在几天到几周内发生极化弛豫。在这里，我们利用设计师设计的缺陷工程外延 BiFeO3 薄膜来证明偏振保持能力，在超过 1 年的时间里，开关纳米级域几乎没有退化。这比迄今为止报告的最佳值提高了 2000% 以上。基于扫描探针显微镜的动态切换测量揭示了畴壁运动的激活场显着增加。原子分辨率扫描透射电子显微镜表明纳米级缺陷袋遍布整个薄膜厚度。这些缺陷充当高效的畴壁钉扎中心，导致异常保留。我们的研究结果表明，可以积极地利用缺陷来解决功能器件中使用的铁电薄膜的可靠性问题。

更新日期：2020-01-17

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