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Phase mixing in GaSb nanocrystals synthesized by nonequilibrium plasma aerotaxy
Plasma Processes and Polymers ( IF 2.9 ) Pub Date : 2020-01-17 , DOI: 10.1002/ppap.201900233
Necip B. Uner 1 , Elijah Thimsen 1, 2
Affiliation  

III–V semiconductor nanocrystals are an important class of optoelectronic materials. However, the gas‐phase synthesis of these materials, especially of the stibnides, has been left relatively unexplored. In this study, we demonstrate the synthesis of free‐standing GaSb nanocrystals for the first time, using a novel gas‐phase process. We show that when elemental aerosols are used as precursors for Ga and Sb, the elements mix at the nanometer length scale as the aerosols pass through a nonequilibrium plasma reactor. At sufficiently high plasma power, the mixing produces free‐standing GaSb nanocrystals, with a small amount of excess Ga segregated at the periphery of the particles. The reaction is initiated by vaporization of elemental aerosols in the plasma despite the low‐background temperature. Ion bombardment determines the extent of vaporization of Ga and Sb and thereby controls the ensemble stoichiometry and reaction rates.

中文翻译:

非平衡等离子体航电合成GaSb纳米晶体的相混合

III–V半导体纳米晶体是一类重要的光电材料。然而,这些材料的气相合成,尤其是杀虫剂的气相合成,还没有被开发。在这项研究中,我们首次使用新型气相工艺演示了独立式GaSb纳米晶体的合成。我们表明,当元素气溶胶用作Ga和Sb的前体时,随着气溶胶穿过非平衡等离子体反应器,元素在纳米级尺度上混合。在足够高的等离子体功率下,混合会产生自立式GaSb纳米晶体,少量过量的Ga偏析在颗粒的外围。尽管背景温度较低,但反应仍是通过血浆中元素气溶胶的汽化来引发的。
更新日期:2020-01-17
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