当前位置：
X-MOL 学术
›
ChemPhysChem
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Visible-NIR Photodetectors Based on Low-Dimensional GeSe Micro-Crystals: Designed Morphology and Improved Photoresponsivity.
ChemPhysChem ( IF 2.3 ) Pub Date : 2020-02-04 , DOI: 10.1002/cphc.201901217 Feiyu Zhao 1 , Xue Luo 1 , Lixiang Liu 2 , Jianhang Lv 2 , Xianping Fan 1 , Xvsheng Qiao 1 , Yang Xu 1, 2 , Lorenz Kienle 3 , Xianghua Zhang 4 , Guodong Qian 1
ChemPhysChem ( IF 2.3 ) Pub Date : 2020-02-04 , DOI: 10.1002/cphc.201901217 Feiyu Zhao 1 , Xue Luo 1 , Lixiang Liu 2 , Jianhang Lv 2 , Xianping Fan 1 , Xvsheng Qiao 1 , Yang Xu 1, 2 , Lorenz Kienle 3 , Xianghua Zhang 4 , Guodong Qian 1
Affiliation
|
GeSe micro‐sheets and micro‐belts have been synthesized by a facile one‐pot wet chemical method in 1‐octadecene solvent and oleic acid solvent, respectively. The adsorption of more oleic acid molecules on the (002) plane promoted growth along [010] direction of the GeSe micro‐belts and limited carrier transport in this direction, resulting in higher carrier concentration and mobility of the GeSe micro‐belts. The performance of the photodetectors based on the single GeSe micro‐sheet and the single GeSe micro‐belt was investigated under illumination at 532 nm, 980 nm and 1319 nm. Both, photodetectors based on a single GeSe micro‐sheet and a single GeSe micro‐belt, exhibit a high photoresponse, short response/recovery times, and long‐term durability. Moreover, the photodetector based on a single GeSe micro‐belt displays a broadband response with a high responsivity (5562 A/W at 532 nm, 1546 A/W at 980 nm) and detectivity (3.01×1012 Jones at 532 nm, 8.38×1011 Jones at 980 nm). These excellent characteristics render single GeSe micro‐belts very interesting for use as highly efficient photodetectors, especially in the NIR region.
中文翻译：
基于低维GeSe微晶的可见光近红外光电探测器：设计形态和改进的光响应性。
GeSe微片和微带分别通过简便的一锅湿化学法在1-十八碳烯溶剂和油酸溶剂中合成。（002）平面上更多油酸分子的吸附促进了GeSe微带在[010]方向上的生长，并限制了该方向上的载流子传输，从而导致更高的载流子浓度和GeSe微带的迁移率。在532 nm，980 nm和1319 nm的光照下研究了基于单个GeSe微片和单个GeSe微带的光电探测器的性能。基于单个GeSe微片和单个GeSe微带的光电检测器都具有高的光响应，短的响应/恢复时间和长期的耐用性。此外，在532 nm处为12 Jones，在8.38×10 980 nm下为11 Jones）这些出色的特性使单个GeSe微带成为高效光电探测器非常有意思，特别是在NIR区域。
更新日期：2020-02-04
中文翻译：
基于低维GeSe微晶的可见光近红外光电探测器：设计形态和改进的光响应性。
GeSe微片和微带分别通过简便的一锅湿化学法在1-十八碳烯溶剂和油酸溶剂中合成。（002）平面上更多油酸分子的吸附促进了GeSe微带在[010]方向上的生长，并限制了该方向上的载流子传输，从而导致更高的载流子浓度和GeSe微带的迁移率。在532 nm，980 nm和1319 nm的光照下研究了基于单个GeSe微片和单个GeSe微带的光电探测器的性能。基于单个GeSe微片和单个GeSe微带的光电检测器都具有高的光响应，短的响应/恢复时间和长期的耐用性。此外，在532 nm处为12 Jones，在8.38×10 980 nm下为11 Jones）这些出色的特性使单个GeSe微带成为高效光电探测器非常有意思，特别是在NIR区域。
京公网安备 11010802027423号