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Doping High‐Mobility Donor–Acceptor Copolymer Semiconductors with an Organic Salt for High‐Performance Thermoelectric Materials
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2020-01-16 , DOI: 10.1002/aelm.201900945
Jing Guo 1 , Guodong Li 2, 3 , Heiko Reith 3 , Lang Jiang 4 , Ming Wang 5 , Yuhao Li 6 , Xinhao Wang 7 , Zebing Zeng 7 , Huaizhou Zhao 2 , Xinhui Lu 6 , Gabi Schierning 3 , Kornelius Nielsch 3 , Lei Liao 1 , Yuanyuan Hu 1
Affiliation  

Organic semiconductors (OSCs) are attractive for fabrication of thermoelectric devices with low cost, large area, low toxicity, and high flexibility. In order to achieve high‐performance organic thermoelectric devices (OTEs), it is essential to develop OSCs with high conductivity (σ ), large Seebeck coefficient (S), and low thermal conductivity (κ ). It is equally important to explore efficient dopants matching the need of thermoelectric devices. The thermoelectric performance of a high‐mobility donor–acceptor (D–A) polymer semiconductor, which is doped by an organic salt, is studied. Both a high p‐type electrical conductivity approaching 4 S cm−1 and an excellent power factor (PF) of 7 µW K−2 m−1 are obtained, which are among the highest reported values for polymer semiconductors. Temperature‐dependent conductivity, Seebeck coefficient and power factor of the doped materials are systematically investigated. Detailed analysis on the results of thermoelectric measurements has revealed a hopping transport in the materials, which verifies the empirical relationship: S ∝ σ−1/4 and PF ∝ σ1/2. The results demonstrate that D–A copolymer semiconductors with proper combination of dopants have great potential for fabricating high‐performance thermoelectric devices.

中文翻译:

高性能热电材料用有机盐掺杂高迁移率供体-受体共聚物半导体

有机半导体(OSC)具有低成本,大面积,低毒性和高柔韧性的特点,可用于制造热电器件。为了获得高性能的有机热电器件(OTE),开发具有高电导率(σ),大塞贝克系数(S)和低热导率(κ)的OSC是必不可少的。探索与热电器件需求相匹配的有效掺杂剂同样重要。研究了由有机盐掺杂的高迁移率供体-受体(DA)聚合物半导体的热电性能。接近4 S cm -1的高p型电导率和7 µW K -2 m -1的出色功率因数(PF获得了聚合物半导体中最高的报告值。系统地研究了掺杂材料的温度依赖性电导率,塞贝克系数和功率因数。关于热电测量的结果的详细分析显示在材料运输跳频,从而验证的经验关系: 小号 ασ -1/4PF  ασ 1/2。结果表明,掺有适当掺杂剂的D–A共聚物半导体具有制造高性能热电器件的巨大潜力。
更新日期:2020-03-09
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