Silicon heterojunction solar cells toward higher fill factor,Progress in Photovoltaics

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Silicon heterojunction solar cells toward higher fill factor
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-01-16 , DOI: 10.1002/pip.3241
Luca Martini ₁ , Luca Serenelli ₁ , Francesca Menchini ₁ , Massimo Izzi ₁ , Mario Tucci ₁

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One of the most limiting factors in the record conversion efficiency of amorphous/crystalline silicon heterojunction solar cells is the not impressive fill factor value. In this work, with the aid of a numerical model, the ways to enhance the cell fill factor up to 85% are investigated in detail, considering the properties of conventional amorphous‐doped films, wider Energy gap layers, and transparent conductive oxide films. The band alignment among the various materials composing the heterojunction is the key to high efficiency but becomes an issue for the solar cell fill factor, if not well addressed. One of the most interesting outcomes of this work is the evidence of hidden barriers arising between the transparent conductive oxide and both selective contacts, due to the mismatch between their work functions. The measurement of light current‐voltage characteristics performed at low temperature is proposed as a way to identify the presence of these barriers in efficient solar cells that do not possess high fill factor values. Experimental J‐V characteristics compared with numerical simulations demonstrated that the sometimes neglected cell base contact needs instead a more careful consideration. To this aim, a model to predict the presence of a hidden barrier at the base contact that limits the cell fill factor is proposed.

中文翻译：

硅异质结太阳能电池朝着更高的填充因子

在非晶/晶体硅异质结太阳能电池的记录转换效率中，最大的限制因素之一是令人印象深刻的填充因子值。在这项工作中，借助数值模型，详细研究了将电池填充因子提高到85％的方法，同时考虑了常规非晶掺杂膜，较宽的能隙层和透明导电氧化物膜的性能。组成异质结的各种材料之间的能带对准是实现高效率的关键，但如果不能很好地解决，则会成为太阳能电池填充因子的问题。这项工作最有趣的成果之一是，由于透明导电氧化物和两个选择性触点之间的功函数不匹配，因此在它们之间出现了隐藏的障碍。提出了在低温下进行光电流-电压特性的测量，以识别在不具有高填充因子值的高效太阳能电池中是否存在这些势垒的方法。实验的JV特性与数值模拟相比表明，有时需要忽略的电池基础接触需要更仔细的考虑。为了这个目的，提出了一种模型，该模型预测限制电池填充因子的基极接触处的隐藏势垒的存在。实验的JV特性与数值模拟相比表明，有时需要忽略的电池基础接触需要更仔细的考虑。为了这个目的，提出了一种模型，该模型预测限制电池填充因子的基极接触处的隐藏势垒的存在。实验的JV特性与数值模拟相比表明，有时需要忽略的电池基础接触需要更仔细的考虑。为了这个目的，提出了一种模型，该模型预测限制电池填充因子的基极接触处的隐藏势垒的存在。

更新日期：2020-01-16

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