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A spirofluorene-end-capped bis-stilbene derivative with a low amplified spontaneous emission threshold and balanced hole and electron mobilities
Optical Materials ( IF 3.8 ) Pub Date : 2020-02-01 , DOI: 10.1016/j.optmat.2019.109636
Shi-Bin Ruan , Chin-Yiu Chan , Hao Ye , Ko Inada , Fatima Bencheikh , Atula S.D. Sandanayaka , Toshinori Matsushima , Chihaya Adachi

Abstract To realize high performance in electrically pumped organic semiconductor laser diodes, organic-gain materials with low thresholds of amplified spontaneous emission and laser and balanced hole and electron mobilities are required. However, it is still very difficult to find such well-balanced organic materials. In this study, we show that a spirofluorene-end-capped bis-stilbene derivative of 4-((E)-2-(9,9′-spirobi[fluoren]-3-yl)vinyl)-4'-((E)-2-(9,9′-spirobi[fluoren]-6-yl)vinyl)-1,1′-biphenyl (BSBSF) is an excellent gain medium with a low amplified spontaneous emission threshold of 0.66 μJ cm−2 even in neat films. Additionally, the hole and electron mobilities of BSBSF films are very similar over a wide voltage range. Taking advantage of the balanced mobilities, we were able to obtain suppressed efficiency roll-off in BSBSF-based organic light-emitting diodes. These results will contribute toward fabrication of optically and electrically pumped organic semiconductor laser diodes with high performance.

中文翻译:

具有低放大自发发射阈值和平衡空穴和电子迁移率的螺芴封端的双二苯乙烯衍生物

摘要 为了实现电泵浦有机半导体激光二极管的高性能,需要具有低放大自发辐射和激光阈值以及平衡空穴和电子迁移率的有机增益材料。然而,要找到这种平衡良好的有机材料仍然非常困难。在这项研究中,我们展示了 4-((E)-2-(9,9'-螺二[芴]-3-基)乙烯基)-4'-(( E)-2-(9,9'-螺二[芴]-6-基)乙烯基)-1,1'-联苯 (BSBSF) 是一种极好的增益介质,具有 0.66 μJ cm-2 的低放大自发发射阈值即使在整洁的电影中。此外,BSBSF 薄膜的空穴和电子迁移率在很宽的电压范围内非常相似。利用平衡的流动性,我们能够在基于 BSBSF 的有机发光二极管中获得抑制的效率滚降。这些结果将有助于制造具有高性能的光和电泵浦有机半导体激光二极管。
更新日期:2020-02-01
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