Abstract All-inorganic cesium lead halide perovskites (CsPbX3, X = Cl, Br, and I) nanocrystals (NCs) have been extensively studied as optically active materials in photodetectors, light-emitting diodes, solar cells and lasers, in view of their combination of the outstanding characteristics of perovskites and NCs such as low cost, solution processability, bandgap tunability, and large absorption coefficient. Here we report the fabrication of graphene electrode based CsPbBr3 NCs vertical field-effect phototransistor (VFEPT), exhibiting high photoelectrical performances benifiting from the ultrashort channel, the high ultraviolet–visible absorption of CsPbBr3 NCs, and the adjustable Fermi level of graphene. The VFEPT exhibited high drain current density of 0.25 A/cm2 for p-type and 0.2 A/cm2 for n-type transports in dark condition. The responsivity, effective quantum efficiency and detectivity reached as high as 2.2 × 103 A/W, 6.7 × 105%, 1.1 × 109 Jones at an irradiance power of 342 mW/cm2 under 405 nm illumination. Additionally, the device showed excellent stable and reproducible dynamic response to cyclical optical signal, with the rise and decay time as fast as 20 ms/36 ms. The device described here has great potential applications in high-sensitivity, high-speed, and low-power nanometer-scale photodetectors.

中文翻译：

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具有石墨烯电极的高性能 CsPbBr3 钙钛矿纳米晶体垂直光电晶体管

摘要 全无机铯卤化铅钙钛矿（CsPbX3，X = Cl，Br 和 I）纳米晶体 (NCs) 已被广泛研究作为光电探测器、发光二极管、太阳能电池和激光器中的光学活性材料，鉴于它们的组合钙钛矿和 NC 的突出特点，如低成本、溶液加工性、带隙可调性和大吸收系数。在这里，我们报告了基于石墨烯电极的 CsPbBr3 NCs 垂直场效应光电晶体管 (VFEPT) 的制造，该晶体管表现出得益于超短沟道、CsPbBr3 NCs 的高紫外-可见吸收和石墨烯的可调节费米能级的高光电性能。VFEPT 在黑暗条件下表现出高漏极电流密度，p 型为 0.25 A/cm2，n 型传输为 0.2 A/cm2。响应能力，在 405 nm 照射下，有效量子效率和探测率高达 2.2 × 103 A/W、6.7 × 105%、1.1 × 109 Jones，辐照功率为 342 mW/cm2。此外，该器件对循环光信号表现出优异的稳定和可重复的动态响应，上升和衰减时间快至 20 ms/36 ms。这里描述的器件在高灵敏度、高速和低功耗的纳米级光电探测器中具有巨大的潜在应用。