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Synergistic Regulation of Phonon and Electronic Properties to Improve the Thermoelectric Performance of Chalcogenide CuIn1−xGaxTe2:yInTe (x = 0–0.3) with In Situ Formed Nanoscale Phase InTe
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-01-15 , DOI: 10.1002/aelm.201901141 Min Li 1, 2 , Yong Luo 2 , Xiaojuan Hu 3 , Gemei Cai 4 , Zhongkang Han 3, 5 , Zhengliang Du 1 , Jiaolin Cui 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-01-15 , DOI: 10.1002/aelm.201901141 Min Li 1, 2 , Yong Luo 2 , Xiaojuan Hu 3 , Gemei Cai 4 , Zhongkang Han 3, 5 , Zhengliang Du 1 , Jiaolin Cui 1
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Most ternary Cu‐In‐Te chalcogenides have large bandgaps and high Seebeck coefficients, hence they have received much attention in the thermoelectric (TE) community. However, it is still challenging to reduce their thermal conductivities while sustaining their electrical properties; therefore, much work needs to be done. The phonon and electronic properties in ternary CuInTe2‐based chalcogenides CuIn1−xGaxTe2:yInTe (x = 0–0.3) with in situ formed nanoscale phase InTe precipitated in the grain boundaries is synergistically regulated. This regulation reduces the lattice thermal conductivity by a factor of ≈2 compared to pristine CuInTe2, due to phonon–phonon interaction and point defect scatterings introduced in the main phase at high temperatures for samples at x ≤ 0.2, combined with the phonon blocking effect from InTe at low and middle temperatures. At the same time, the power factor enhances by 73%. As a result, the TE performance improves significantly with a peak figure of merit value of 1.22 at ≈850 K.
中文翻译：
与原位形成纳米级相InTe的声子和电子性能的协同调节，以改善硫族化物CuIn1-xGaxTe2：yInTe（x = 0-0.3）的热电性能
大多数三元Cu-In-Te硫族化物具有较大的带隙和较高的塞贝克系数，因此在热电（TE）社区受到了广泛关注。然而，在保持其电性能的同时降低其热导率仍然是挑战。因此，需要做很多工作。基于CuInTe 2的三族硫族化物CuIn 1- x Ga x Te 2：y InTe（x = 0-0.3）的声子和电子性质具有协同调控的原位形成在晶界中沉淀的纳米级相InTe。与原始的CuInTe 2相比，该规定将晶格热导率降低了≈2倍。时，由于在高温下在主相中引入用于样品声子-声子相互作用和点缺陷散射X ≤0.2，与声子阻挡在低和中等温度下INTE效果相结合。同时，功率因数提高了73％。结果，在≈850K时，TE的品质因数峰值达到1.22，从而显着提高了TE性能。
更新日期：2020-02-13
中文翻译：
与原位形成纳米级相InTe的声子和电子性能的协同调节，以改善硫族化物CuIn1-xGaxTe2：yInTe（x = 0-0.3）的热电性能
大多数三元Cu-In-Te硫族化物具有较大的带隙和较高的塞贝克系数，因此在热电（TE）社区受到了广泛关注。然而，在保持其电性能的同时降低其热导率仍然是挑战。因此，需要做很多工作。基于CuInTe 2的三族硫族化物CuIn 1- x Ga x Te 2：y InTe（x = 0-0.3）的声子和电子性质具有协同调控的原位形成在晶界中沉淀的纳米级相InTe。与原始的CuInTe 2相比，该规定将晶格热导率降低了≈2倍。时，由于在高温下在主相中引入用于样品声子-声子相互作用和点缺陷散射X ≤0.2，与声子阻挡在低和中等温度下INTE效果相结合。同时，功率因数提高了73％。结果，在≈850K时，TE的品质因数峰值达到1.22，从而显着提高了TE性能。
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