当前位置：
X-MOL 学术
›
Adv. Electron. Mater.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Designing High‐Performance Storage in HfO2/BiFeO3 Memristor for Artificial Synapse Applications
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-01-15 , DOI: 10.1002/aelm.201901012 Lei Liu 1 , Wen Xiong 1 , Yanxin Liu 1 , Kaige Chen 1 , Zhong Xu 1 , Yi Zhou 1 , Jia Han 1 , Cong Ye 1 , Xin Chen 2 , Zhitang Song 2 , Min Zhu 2
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-01-15 , DOI: 10.1002/aelm.201901012 Lei Liu 1 , Wen Xiong 1 , Yanxin Liu 1 , Kaige Chen 1 , Zhong Xu 1 , Yi Zhou 1 , Jia Han 1 , Cong Ye 1 , Xin Chen 2 , Zhitang Song 2 , Min Zhu 2
Affiliation
|
HfO2‐based memristors that remembers the history of the current that has passed through them have attracted great interest for use as artificial synapses in neuromorphic systems. However, the low resistance contrast exhibited by HfO2‐based memristors seriously decreases their recognition accuracy. By inserting a 2 nm BiFeO3 layer a large memory window of 104 and remarkable pulse endurance of 108 cycles are achieved. Multilevel storage capability is also demonstrated by controlling the stop voltages in the RESET process. The conductance–modulation characteristics of a BiFeO3/HfO2 memristor can be used to mimic the learning behaviors of biological synapses, and spiking timing dependent plasticity is mimicked, which is viewed as an important learning rule of biological synapses. Moreover pattern learning and memorization ability like the human brain are achieved by a 3 × 3 memristive device array.
中文翻译：
在HfO2 / BiFeO3忆阻器中为人工突触设计高性能存储
基于HfO 2的忆阻器记忆了通过它们的电流的历史，因此在神经形态系统中用作人工突触引起了极大的兴趣。但是，基于HfO 2的忆阻器表现出的低电阻对比度会严重降低其识别精度。通过插入2 nm BiFeO 3层，可实现10 4的大存储窗口和10 8循环的出色脉冲耐久力。通过控制RESET过程中的停止电压，也证明了多级存储能力。BiFeO 3 / HfO 2的电导调制特性忆阻器可用于模仿生物突触的学习行为，并且模仿尖峰时间相关的可塑性，这被认为是生物突触的重要学习规则。此外，像人类大脑一样的模式学习和记忆能力是通过3×3忆阻器阵列实现的。
更新日期：2020-02-13
中文翻译：
在HfO2 / BiFeO3忆阻器中为人工突触设计高性能存储
基于HfO 2的忆阻器记忆了通过它们的电流的历史，因此在神经形态系统中用作人工突触引起了极大的兴趣。但是，基于HfO 2的忆阻器表现出的低电阻对比度会严重降低其识别精度。通过插入2 nm BiFeO 3层，可实现10 4的大存储窗口和10 8循环的出色脉冲耐久力。通过控制RESET过程中的停止电压，也证明了多级存储能力。BiFeO 3 / HfO 2的电导调制特性忆阻器可用于模仿生物突触的学习行为，并且模仿尖峰时间相关的可塑性，这被认为是生物突触的重要学习规则。此外，像人类大脑一样的模式学习和记忆能力是通过3×3忆阻器阵列实现的。
京公网安备 11010802027423号