To improve the stability and carrier mobility of quantum dot (QD) optoelectronic devices, encapsulation or pore infilling processes are advantageous. Atomic layer deposition (ALD) is an ideal technique to infill and overcoat QD films, as it provides excellent control over film growth at the sub‐nanometer scale and results in conformal coatings with mild processing conditions. Different thicknesses of crystalline ZnO films deposited on InP QD films are studied with spectrophotometry and time‐resolved microwave conductivity measurements. High carrier mobilities of 4 cm² (V s)⁻¹ and charge separation between the QDs and ZnO are observed. Furthermore, the results confirm that the stability of QD thin films is strongly improved when the inorganic ALD coating is applied. Finally, proof‐of‐concept photovoltaic devices of InP QD films are demonstrated with an ALD‐grown ZnO electron extraction layer.

中文翻译：

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ZnO在InP量子点薄膜上的原子层沉积，用于电荷分离，稳定化和太阳能电池形成

为了提高量子点（QD）光电器件的稳定性和载流子迁移率，封装或孔填充工艺是有利的。原子层沉积（ALD）是填充和覆盖QD膜的理想技术，因为它可以很好地控制亚纳米级的膜生长，并在温和的加工条件下形成保形涂层。用分光光度法和时间分辨微波电导率测量研究了InP QD膜上沉积的不同厚度的ZnO结晶膜。4 cm ²（V s）^-1的高载流子迁移率观察到量子点和ZnO之间的电荷分离。此外，结果证实，当施加无机ALD涂层时，QD薄膜的稳定性得到了极大的改善。最后，通过ALD生长的ZnO电子提取层演示了InP QD薄膜的概念验证光伏器件。