Memristive Switching: Magneto‐Memristive Switching in a 2D Layer Antiferromagnet (Adv. Mater. 2/2020),Advanced Materials

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Memristive Switching: Magneto‐Memristive Switching in a 2D Layer Antiferromagnet (Adv. Mater. 2/2020)
Advanced Materials ( IF 27.4 ) Pub Date : 2020-01-14 , DOI: 10.1002/adma.202070010
Hyun Ho Kim ₁ , Shengwei Jiang ₂ , Bowen Yang ₁ , Shazhou Zhong ₁ , Shangjie Tian ₃ , Chenghe Li ₃ , Hechang Lei ₃ , Jie Shan ₂ , Kin Fai Mak ₂ , Adam W. Tsen ₁

Affiliation

In article number 1905433, Adam W. Tsen and co‐workers simultaneously demonstrate magnetic‐field‐tunable memristive switching and electrical control of magnetism in nanoscale tunnel junctions incorporating a 2D layer antiferromagnet, chromium triiodide. Driven by the positive feedback of self‐heating, the current and magnetic transitions are robust and further occur under a 40 ns timescale. Such devices may find potential applications in spintronics, neuromorphic computing, and phase‐change memory.

中文翻译：

忆阻开关：2D层反铁磁体中的磁阻开关（Adv。Mater。2/2020）

在1905433号文章中，Adam W. Tsen和他的同事们同时展示了结合2D层反铁磁体三碘化铬的纳米级隧道结中的磁场可调忆阻开关和磁性电学控制。在自热正反馈的驱动下，电流和磁跃迁很稳定，并且会在40 ns的时间范围内进一步发生。这样的设备可能会在自旋电子学，神经形态计算和相变存储器中找到潜在的应用。

更新日期：2020-01-15

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