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Memristive Switching: Magneto‐Memristive Switching in a 2D Layer Antiferromagnet (Adv. Mater. 2/2020)
Advanced Materials ( IF 27.398 ) Pub Date : 2020-01-14 , DOI: 10.1002/adma.202070010
Hyun Ho Kim; Shengwei Jiang; Bowen Yang; Shazhou Zhong; Shangjie Tian; Chenghe Li; Hechang Lei; Jie Shan; Kin Fai Mak; Adam W. Tsen

In article number 1905433, Adam W. Tsen and co‐workers simultaneously demonstrate magnetic‐field‐tunable memristive switching and electrical control of magnetism in nanoscale tunnel junctions incorporating a 2D layer antiferromagnet, chromium triiodide. Driven by the positive feedback of self‐heating, the current and magnetic transitions are robust and further occur under a 40 ns timescale. Such devices may find potential applications in spintronics, neuromorphic computing, and phase‐change memory.
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更新日期:2020-01-15

 

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