Nanostructured n-Bi₂O₃/p-CuBi₂O₄/p-CuO photocathodes with incident photon-to-current conversion efficiency IPCE_max = 70% (λ = 400 nm) have been prepared using electrochemical and chemical methods. Platelet-like BiOI nanocrystals electrochemically deposited on FTO substrate were used as precursors. CuI nanoparticles were deposited on the BiOI surface by successive ionic layer adsorption and reaction technique. Oxidative heat treatment of BiOI/CuI heterostructure in air leads to the formation of the Bi₂O₃/CuBi₂O₄/CuO composite. Binary oxide was formed as a result of solid-state interaction between bismuth and copper oxides at their interface.

Spectral sensitization of wide-gap n-Bi₂O₃ (band gap E_g = 2.80 eV) with narrow-gap p-CuBi₂O₄ (E_g = 1.80 eV) and p-CuO (E_g = 1.45 eV) extends spectral sensitivity range up to 800 nm by Z-scheme implementation: cathodic photocurrent is associated with the transition of photoelectrons from p-CuBi₂O₄ and p-CuO to the solution, while photoholes recombine with electrons of n-Bi₂O₃ conduction band. High quantum efficiency of photocurrent was achieved due to band-edge correlation in a three-component oxide heterostructure, combined with an internal electric field in p-CuBi₂O₄ and effective photon absorption by two narrow-band-gap p-CuBi₂O₄ and p-CuO semiconductors.

 使用电化学和化学方法制备了具有入射光子-电流转换效率IPCE _max  = 70％（λ = 400 nm）的纳米结构n -Bi ₂ O ₃ / p -CuBi ₂ O ₄ / p -CuO光电阴极。电化学沉积在FTO基板上的片状BiOI纳米晶体被用作前体。通过连续的离子层吸附和反应技术，将CuI纳米颗粒沉积在BiOI表面上。空气中BiOI / CuI异质结构的氧化热处理导致Bi ₂ O ₃ / CuBi ₂ O _4的形成/ CuO复合材料。铋和氧化铜在界面处发生固相相互作用的结果是形成了二元氧化物。

宽间隙n -Bi ₂ O ₃（带隙E _g  = 2.80 eV）和窄间隙p -CuBi ₂ O ₄（E _g  = 1.80 eV）和p -CuO（E _g  = 1.45 eV）的光谱敏化扩展通过Z方案实现的光谱灵敏度范围高达800 nm：阴极光电流与光电子从p -CuBi ₂ O ₄和p -CuO到溶液的跃迁有关，而光孔与n -Bi ₂ O _3的电子复合导带。由于三组分氧化物异质结构中的带边相关性，p -CuBi ₂ O _4中的内部电场以及两个窄带隙p -CuBi ₂ O的有效光子吸收，从而实现了光电流的高量子效率。₄和p -CuO半导体。