Crystalline germanium–lead (GePb) alloys were deposited on Ge(100) substrates via magnetron sputtering epitaxy. Strip-shaped Pb segregation along the <110> direction was observed on the Ge 0.976 Pb 0.024 film surface, as revealed by scanning electron microscopy. The chemical compositions and structural properties of the strip-shaped segregation were investigated by energy-dispersive X-ray spectroscopy, cross-sectional transmission electron microscopy and micro-Raman scattering spectra. The Ge 0.976 Pb 0.024 film remained high crystal quality even after Pb segregation. The strip-shaped segregation was mainly composed of polycrystalline Pb, and its surface was covered with a GePb nanocrystalline layer.

中文翻译：

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锗-铅外延生长过程中铅表面偏析的研究

通过磁控溅射外延将结晶锗铅 (GePb) 合金沉积在 Ge(100) 衬底上。扫描电子显微镜显示，在 Ge 0.976 Pb 0.024 膜表面观察到沿 <110> 方向的条状 Pb 偏析。通过能量色散X射线光谱、横截面透射电子显微镜和微拉曼散射光谱研究了条状偏析的化学成分和结构特性。即使在 Pb 偏析之后，Ge 0.976 Pb 0.024 膜仍保持高晶体质量。条状偏析主要由多晶Pb组成，其表面覆盖有GePb纳米晶层。