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Doping-Enhanced Current Rectification in Carbon Nanotube-Metal Junctions for Rectenna Applications.
ACS Omega ( IF 3.7 ) Pub Date : 2019-12-30 , DOI: 10.1021/acsomega.9b02352
Golibjon R Berdiyorov 1 , Hicham Hamoudi 1
Affiliation  

Using density functional theory in combination with Green's functional formalism, we study the effect of chemical doping on the electronic transport properties of carbon nanotube (CNT)-metal junctions. Both surface doping (i.e., surface fluorination) and substitutional doping with different dopant atoms (e.g., B, N, and P) are considered. Profound current rectification is obtained for the fluorinated samples, whereas substitutional doping results in only small asymmetry in the current-voltage characteristics of the system despite the smallest differential resistance. The current rectification originates from voltage-dependent charge localization in the system as revealed in our transmission spectrum analysis. We also study the effect of CNT morphology (i.e., tip opining, radius, length, chirality, and multiple walls) on the electronic transport properties of the CNT-metal junction. CNT-insulator-metal junctions are also investigated as a reference to our doped systems. The results show the possibility of creating fluorinated CNT-based diodes for practical nanoelectronic applications, such as rectenna solar cells.

中文翻译:

用于Rectenna应用的碳纳米管-金属结中的掺杂增强型电流整流。

使用密度泛函理论与格林的功能形式主义相结合,我们研究了化学掺杂对碳纳米管(CNT)-金属结的电子传输性质的影响。既考虑了表面掺杂(即表面氟化)又考虑了使用不同掺杂原子(例如B,N和P)的替代掺杂。对于氟化样品,可获得深层整流,而尽管掺杂电阻最小,但替代掺杂只会导致系统电流-电压特性的不对称性很小。如我们的传输频谱分析所示,电流整流源自系统中与电压相关的电荷定位。我们还研究了CNT形态的影响(即尖端倾斜,半径,长度,手性,和多壁)对CNT-金属结的电子传输性能的影响。还研究了CNT-绝缘体-金属结,以作为我们掺杂系统的参考。结果表明,有可能为实际的纳米电子应用(例如整流天线太阳能电池)创建氟化的CNT基二极管。
更新日期:2020-01-14
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