Single-crystalline ZnGa₂O₄ epilayers with different diethylzinc (DEZn) flow rates were successfully grown on sapphire substrates. By decreasing the DEZn flow rate and keeping the deposition time constant, the operational mode of the transistors changed from depletion mode (D-mode) to enhancement mode (E-mode). The relevant electrical properties and physical characteristics are well presented and verified. An E-mode (DEZn = 10 sccm) n-channel thin-film transistor was fabricated for deep-ultraviolet (DUV) phototransistor application. In the phototransistor, the photocurrent gain values increased substantially in the DUV region, the peak value of which measures 1.54 × 10² at 240 nm. The superior performance of DUV phototransistors is correlated to the improvement in the quality of materials.

中文翻译：

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ZnGa ₂ O ₄外延层制成的省电高性能深紫外光电晶体管

具有不同二乙基锌（DEZn）流速的单晶ZnGa ₂ O ₄外延层成功地生长在蓝宝石衬底上。通过降低DEZn流量并保持沉积时间恒定，晶体管的工作模式从耗尽模式（D模式）变为增强模式（E模式）。有关的电性能和物理特性已得到很好的展示和验证。为深紫外（DUV）光电晶体管应用制造了E型（DEZn = 10 sccm）n沟道薄膜晶体管。在光电晶体管中，DUV区域的光电流增益值显着增加，其峰值为1.54×10 ²在240 nm DUV光电晶体管的卓越性能与材料质量的提高相关。