当前位置：
X-MOL 学术
›
ACS Appl. Electron. Mater.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
High Performance Flexible Organic Field-Effect Transistors with Barium Strontium Titanate Gate Dielectric Deposited at Room Temperature
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-01-23 , DOI: 10.1021/acsaelm.9b00779 Vivek Raghuwanshi 1 , Deepak Bharti 2 , Ajay Kumar Mahato 1 , Amit Kumar Shringi 1 , Ishan Varun 1 , Shree Prakash Tiwari 1
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-01-23 , DOI: 10.1021/acsaelm.9b00779 Vivek Raghuwanshi 1 , Deepak Bharti 2 , Ajay Kumar Mahato 1 , Amit Kumar Shringi 1 , Ishan Varun 1 , Shree Prakash Tiwari 1
Affiliation
|
Reducing the operating voltage and processing temperature are the crucial factors in the progression of organic field-effect transistors (OFETs) in flexible portable applications. Here, we have demonstrated RF sputtering deposited Ba0.5Sr0.5TiO3(BST) as high-k dielectric material for high performance operationally stable flexible low voltage operated OFETs. It was found that the BST deposition parameters can enormously affect the film properties like dielectric constant, surface morphology, and the crystallinity. The room-temperature-deposited BST films were found to be amorphous in nature with low leakage current, high dielectric constant, smoother surface morphology and high electromechanical stability. The fabricated flexible OFETs with optimized BST film have shown excellent electrical performance with max. field-effect mobility (μmax) of 1.01 cm2 V–1s–1 with near zero threshold voltage (VTH) and Ion/Ioff of ∼105 while operating at −5 V. The fabricated devices were found to be operationally and electromechanically stable when subjected to various electrical and mechanical stress. The investigation has demonstrated that the proposed room-temperature-deposited BST is a suitable candidate for gate dielectric in low voltage operated, long-term electromechanical stable flexible OFETs.
中文翻译：
室温下沉积钛酸钡锶栅极电介质的高性能柔性有机场效应晶体管
在柔性便携式应用中，降低工作电压和处理温度是有机场效应晶体管（OFET）发展的关键因素。在这里，我们证明了RF溅射沉积的Ba 0.5 Sr 0.5 TiO 3（BST）为高k介电材料，用于高性能，运行稳定，柔性低压操作的OFET。已经发现，BST沉积参数可以极大地影响膜性质，例如介电常数，表面形态和结晶度。发现室温沉积的BST膜本质上是非晶的，具有低漏电流，高介电常数，更平滑的表面形态和高的机电稳定性。具有优化的BST膜的柔性OFET制成的电子性能优异，最大可达到 场效应迁移率（max）为1.01 cm 2 V –1 s –1，阈值电压（V TH）接近零，I on /我关闭的〜10 5，而在运行-5发现设备在操作上和机电稳定时经受各种电气和机械应力V的制造。研究表明，建议的室温沉积BST是低压操作，长期机电稳定的挠性OFET中栅极电介质的合适候选者。
更新日期：2020-01-23
中文翻译：
室温下沉积钛酸钡锶栅极电介质的高性能柔性有机场效应晶体管
在柔性便携式应用中，降低工作电压和处理温度是有机场效应晶体管（OFET）发展的关键因素。在这里，我们证明了RF溅射沉积的Ba 0.5 Sr 0.5 TiO 3（BST）为高k介电材料，用于高性能，运行稳定，柔性低压操作的OFET。已经发现，BST沉积参数可以极大地影响膜性质，例如介电常数，表面形态和结晶度。发现室温沉积的BST膜本质上是非晶的，具有低漏电流，高介电常数，更平滑的表面形态和高的机电稳定性。具有优化的BST膜的柔性OFET制成的电子性能优异，最大可达到 场效应迁移率（max）为1.01 cm 2 V –1 s –1，阈值电压（V TH）接近零，I on /我关闭的〜10 5，而在运行-5发现设备在操作上和机电稳定时经受各种电气和机械应力V的制造。研究表明，建议的室温沉积BST是低压操作，长期机电稳定的挠性OFET中栅极电介质的合适候选者。
京公网安备 11010802027423号