The Cu-based oxychalcogenides among p-type transparent conducting materials (TCMs) demonstrate significant results in term of their optoelectronic properties. So, they are being focused on our current study. In this paper, we reported a detailed analysis relating to the spin-dependent electronic and optical properties of Cu-based Lanthanide oxychalcogenides materials, ACuOS (A = La, Ce and Pr) by means of Density Functional Theory (DFT). We observe a decrease in the energy band-gap values for the substitution of lanthanide La→Pr which was in a fine agreement to the experimental results. The band-gap energy values are concluded to be smaller for the case of spin up in comparison to spin down case. The majority and minority spin cases of the band structures and density of states for the three materials are compared and discussed in detail. We also computed spin-dependent optical parameters like the real and imaginary parts of dielectric function, refractive index, reflectivity, absorption coefficient and the electron energy loss function for radiations up to energy value of 14 eV. Our investigated optical parameters for these Cu-based oxychalcogenides reveals dissimilarities for both the spin up and down, which are the outcomes of the energy band-gap variations and also the existence of additional structures closer to the Fermi levels which are mostly due to the lanthanides 4f electrons. Their basic material properties including their crystal structures, optical and electronic properties will be covered, as well as their device applications. Also, the development of performance enhancement strategies including doping and other innovative ways to improve performance is still not satisfactory. This has impeded the development of many devices such as photovoltaics, sensors, and transparent electronics properties of materials.

在p型透明导电材料（TCM）中，铜基氧化硫属元素在其光电性能方面显示出显着的结果。因此，他们正专注于我们当前的研究。在本文中，我们通过密度泛函理论（DFT）报告了与基于铜的镧系元素氧化硫属元素化物ACuOS（A = La，Ce和Pr）自旋相关的电子和光学性质的详细分析。我们观察到镧系元素La→Pr的取代能带隙值降低，这与实验结果完全吻合。结论是，与向下旋转的情况相比，向上旋转的情况的带隙能量值较小。比较并详细讨论了三种材料的能带自旋情况和状态密度的多数和少数情况。我们还计算了自旋相关的光学参数，例如介电函数的实部和虚部，折射率，反射率，吸收系数和电子能量损失函数（对于能量值高达14 eV的辐射）。我们研究的这些基于铜的氧化硫属元素化物的光学参数揭示了自旋向上和向下的差异，这是能带隙变化的结果，并且还存在更接近费米能级的其他结构，这主要归因于镧系元素4f电子。它们的基本材料特性，包括其晶体结构，光学和电子特性，以及它们的器件应用都将被涵盖。也，包括掺杂和其他创新方式来提高性能的性能增强策略的开发仍然不能令人满意。这阻碍了许多设备的开发，例如光伏，传感器和材料的透明电子特性。