Here, we present an analytical modeling of electron mobility in two dimensional electron gas (2DEG)-yielding MgZnO/ZnO heterostructures, to ascertain dominant scattering mechanisms and physical parameters responsible for one-order lower value of electron mobility in sputtering-grown heterostructure as compared to that in molecular beam epitaxy-grown heterostructure. This work extensively probes all scattering components and their physical parameters, such as dislocation density, impurity density, mole fraction, 2DEG density, correlation length and lateral size, for their respective effects on electron mobility of sputtered heterostructure. The results suggest that dislocation density and alloy disorder scattering are the most dominant sources responsible for reduced electron mobility. This work is extremely crucial for achieving high electron mobility by optimizing the material growth parameters to attain low dislocation density, impurity density and interface roughness, for the...

中文翻译：

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溅射生长的MgZnO / ZnO异质结构中2DEG中的电子散射分析

在这里，我们提出了一种二维二维产生MgZnO / ZnO异质气的电子迁移率的分析模型，以确定与溅射生长的异质结相比，电子散射的一阶较低值的主要散射机制和物理参数。分子束外延生长的异质结构 这项工作广泛地探究了所有散射成分及其物理参数，例如位错密度，杂质密度，摩尔分数，2DEG密度，相关长度和横向尺寸，以了解它们各自对溅射异质结构的电子迁移率的影响。结果表明，位错密度和合金无序散射是导致电子迁移率降低的最主要来源。