Abstract BiVO4 has attracted great attention as a semiconductor for Photoelectrochemical (PEC) water splitting because of its low cost, good stability, and suitable band gap of 2.4 eV. In this research, the contribution of g-C3N4@ZnO on BiVO4 photoelectrochemical performance, light absorption, charge transportation, and morphology were investigated. Incorporation of g-C3N4/ZnO as underlying layer in heterojunction with BiVO4 boosted the photocurrent from ∼ 0.21 mA cm−2 for bare BiVO4 to 0.65 mA cm−2 for g-C3N4@ZnO/BiVO4 heterojunction composite structure at 1.23 V versus Ag/AgCl. The C and N elements derived from g-C3N4 on ZnO resulted in a tenacious interactions, lowered charge transfer resistance and increased light absorption of BiVO4. The high photoelectrochemical performance, together with good electrochemical impedance spectroscopy parameters and stability reveals g-C3N4/ZnO composite to be a suitable candidate in enhancing the performance of BiVO4 for PEC solar water splitting applications.

中文翻译：

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通过创建 g-C3N4/ZnO@BiVO4 异质结提高 BiVO4 的光催化活性

摘要 BiVO4作为一种光电化学（PEC）水分解半导体，因其成本低、稳定性好、带隙为2.4 eV等优点而备受关注。在本研究中，研究了 g-C3N4@ZnO 对 BiVO4 光电化学性能、光吸收、电荷传输和形貌的贡献。在异质结中加入 g-C3N4/ZnO 作为底层与 BiVO4 将光电流从裸 BiVO4 的~0.21 mA cm-2 提高到 g-C3N4@ZnO/BiVO4 异质结复合结构的 0.65 mA cm-2，在 1.23 V 与 Ag/氯化银。源自 ZnO 上的 g-C3N4 的 C 和 N 元素导致了顽固的相互作用，降低了电荷转移电阻并增加了 BiVO4 的光吸收。高光电化学性能，