A series of MoS2 films were prepared by the chemical bath deposition method at different temperatures (60–80 °C). The film thicknesses range from 0.988 up to 10.25 µm. The films are polycrystalline. Vibrating sample magnetometer (VSM) was used to study the magnetic properties of these MoS2 films. The experiments were done at room temperature with the magnetic field applied in the film plane. The magnetization curves indicate the coexistence of ferromagnetism and diamagnetism. The saturation and remnant magnetizations, the coercive and saturation fields as well as the diamagnetic susceptibility have been measured and are discussed as a function of the film thickness and the synthesis temperature. A change in the magnetic anisotropy is observed, and the magnetization easy axis direction switches from in-plane to out-of-plane as the thickness increases. The magnetic properties are correlated with the structural ones.

中文翻译：

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二硫化钼薄膜抗磁性和铁磁性的实验研究

通过化学浴沉积法在不同温度（60-80°C）下制备了一系列 MoS2 薄膜。薄膜厚度范围为 0.988 至 10.25 µm。薄膜是多晶的。振动样品磁强计 (VSM) 用于研究这些 MoS2 薄膜的磁性能。实验是在室温下进行的，磁场施加在薄膜平面上。磁化曲线表明铁磁性和抗磁性共存。饱和磁化强度和剩余磁化强度、矫顽磁场和饱和磁场以及抗磁化率已经过测量，并作为薄膜厚度和合成温度的函数进行了讨论。观察到磁各向异性的变化，随着厚度的增加，易磁化轴方向从面内切换到面外。磁性与结构相关。