Abstract

In this research, Sr-doped yttrium nickel oxide-based photodetectors have been fabricated. The electrical properties of diodes have been analyzed by using Cheung and Norde methods. The ideality factors, barrier heights, and series resistances of diodes have been calculated under visible light at different irradiation intensities. In addition, the photoresponse behavior of photodetectors was investigated under visible light at different irradiation intensities. The highest responsivity (R) and detectivity (D^*) were calculated as 25.34 mA/W and 7 × 84 10¹¹ Jones, respectively. These results suggest that the photodetectors can be used optoelectronic device applications.

中文翻译：

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掺锶钇氧化镍基光电探测器

摘要

在这项研究中，已经制造了掺Sr的钇氧化镍镍光电探测器。二极管的电性能已通过使用Cheung和Norde方法进行了分析。已经在可见光下以不同的照射强度计算了二极管的理想因子，势垒高度和串联电阻。另外，在可见光下以不同的照射强度研究了光电探测器的光响应行为。最高响应度（R）和检测度（D ^*）分别计算为25.34 mA / W和7×84 10 ¹¹ Jones。这些结果表明光电检测器可以用于光电器件应用。