Enhanced photoelectrochemical water-splitting performance of SrNbO2N photoanodes using flux-assisted synthesis method and surface defect management,Sustainable Energy & Fuels

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Enhanced photoelectrochemical water-splitting performance of SrNbO2N photoanodes using flux-assisted synthesis method and surface defect management
Sustainable Energy & Fuels ( IF 5.0 ) Pub Date : 2020/01/13 , DOI: 10.1039/c9se01056d
Yingchen Yang _{1,

2,

3,

4,

5} , Zirui Lou _{1,

2,

3,

4,

5} , Weisheng Lei _{1,

2,

3,

4,

5} , Yichen Wang _{1,

2,

3,

4,

5} , Rong Liang _{1,

2,

3,

4,

5} , Chao Qin _{1,

2,

3,

4,

5} , Liping Zhu _{1,

2,

3,

4,

5}

Affiliation

Perovskite SrNbO₂N particles were directly synthesized using a one-step thermal nitridation method with chloride flux and subsequently annealed under an inert Ar flow. By suitable adjustment of the flux synthesis parameters, including the nitridation temperature and the composition of the molten salt, preferable experimental conditions were found to suppress the formation of surface Nb defects and obtain samples with high crystallinity. The different SrNbO₂N photoanodes were fabricated using the electrophoretic deposition (EPD) method followed by necking treatment. The SrNbO₂N photoanode prepared using the optimum experimental conditions (nitridation temperature: 850 °C, a molar ratio of flux SrCl₂ : KCl = 2 : 1) exhibited the highest photocurrent density of 2.0 mA cm⁻² at 1.23 V_RHE under simulated sunlight (AM 1.5G 100 mW cm⁻²) in a 1 M NaOH electrolyte. In comparison, the other highly defective SrNbO₂N photoanodes demonstrated an unsatisfactory water oxidation performance, which demonstrates the necessity to reduce the destructive effect of defects in order to achieve a higher photocurrent density.

中文翻译：

助熔剂合成法和表面缺陷管理提高SrNbO2N光阳极的光电化学水分解性能

钙钛矿型SrNbO ₂ N颗粒是通过一步热氮化法与氯化物通量直接合成的，然后在惰性Ar流下退火。通过适当调整助熔剂合成参数，包括氮化温度和熔融盐的组成，发现了优选的实验条件可以抑制表面Nb缺陷的形成并获得高结晶度的样品。使用电泳沉积（EPD）方法，然后进行颈缩处理，制造了不同的SrNbO ₂ N光阳极。使用最佳实验条件（氮化温度：850°C，助熔剂SrCl ₂的摩尔比）制备的SrNbO ₂ N光电阳极：KCl = 2：1 ）在1 M NaOH电解质中的模拟阳光（AM 1.5G 100 mW cm ^-2）下，在1.23 V _RHE下表现出2.0 mA cm ^-2的最高光电流密度。相比之下，其他高度缺陷的SrNbO ₂ N光电阳极表现出不令人满意的水氧化性能，这表明有必要降低缺陷的破坏作用以实现更高的光电流密度。

更新日期：2020-03-31

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