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Electric field distribution around cadmium and tellurium inclusions within CdTe-based compounds
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2020-03-01 , DOI: 10.1016/j.jcrysgro.2020.125486
Aneta Wardak , Marta Witkowska-Baran , Michał Szot , Dominika Kochanowska , Bartłomiej S. Witkowski , Andrei Avdonin , Andrzej Mycielski

Abstract We examine two kinds of volume defects in CdTe-based compounds grown from the melt: cadmium and tellurium inclusions. We have determined their chemical composition by energy-dispersive X-ray spectroscopy and their internal morphology by infrared transmission microscopy. The tellurium inclusions are spheroidal/polyhedral, while the cadmium ones appear star-like. The core size of both the tellurium and the cadmium inclusions is 5–8 μm. Cadmium inclusions cause micro cracks so that they create star-like defects the size of which is about ten times bigger than the inclusions themselves. Each pair of branches in the star-shaped defect we associate with the three easy-cleavage planes (1 1 0) of the zinc blende structure. Using Pockels imaging we have investigated how tellurium and cadmium inclusions influence the electric field distribution in CdTe compounds, which is an important issue for nuclear detectors. Only tellurium inclusions distributed along a continuous plane have an impact on the internal electric field. Neither the separated tellurium inclusions nor the separated cadmium inclusions influence the internal electric field. Crystals of (Cd,Mn)(Te,Se) have a high concentration (104–105 cm−3) of both types of inclusions. In (Cd,Mg)Te there are numerous twin boundaries decorated with tellurium inclusions. Among the studied compounds, (Cd,Mn)Te has the highest quality.

中文翻译:

CdTe 基化合物中镉和碲夹杂物周围的电场分布

摘要 我们研究了熔体生长的 CdTe 基化合物中的两种体积缺陷:镉和碲夹杂物。我们通过能量色散 X 射线光谱确定了它们的化学成分,并通过红外透射显微镜确定了它们的内部形态。碲包裹体呈球状/多面体,而镉包裹体呈星状。碲和镉夹杂物的核心尺寸均为 5-8 μm。镉夹杂物会导致微裂纹,因此它们会产生星状缺陷,其尺寸大约是夹杂物本身的十倍。我们将星形缺陷中的每一对分支与闪锌矿结构的三个易解理面 (1 1 0) 相关联。我们使用普克尔斯成像研究了碲和镉夹杂物如何影响 CdTe 化合物中的电场分布,这是核探测器的一个重要问题。只有沿连续平面分布的碲夹杂物对内部电场有影响。分离的碲夹杂物和分离的镉夹杂物都不影响内部电场。(Cd,Mn)(Te,Se) 晶体具有两种类型的夹杂物的高浓度 (104–105 cm-3)。在 (Cd,Mg)Te 中有许多双晶界装饰有碲夹杂物。在所研究的化合物中,(Cd,Mn)Te 的质量最高。分离的碲夹杂物和分离的镉夹杂物都不影响内部电场。(Cd,Mn)(Te,Se) 晶体具有两种类型的夹杂物的高浓度 (104–105 cm-3)。在 (Cd,Mg)Te 中有许多双晶界装饰有碲夹杂物。在所研究的化合物中,(Cd,Mn)Te 的质量最高。分离的碲夹杂物和分离的镉夹杂物都不影响内部电场。(Cd,Mn)(Te,Se) 晶体具有两种类型的夹杂物的高浓度 (104–105 cm-3)。在 (Cd,Mg)Te 中有许多双晶界装饰有碲夹杂物。在所研究的化合物中,(Cd,Mn)Te 的质量最高。
更新日期:2020-03-01
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