Insights into Recombination Processes from Light Intensity–Dependent Open‐Circuit Voltages and Ideality Factors in Planar Perovskite Solar Cells,Energy Technology

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Insights into Recombination Processes from Light Intensity–Dependent Open‐Circuit Voltages and Ideality Factors in Planar Perovskite Solar Cells
Energy Technology ( IF 3.6 ) Pub Date : 2020-01-30 , DOI: 10.1002/ente.201901196
Non Thongprong _{1,

2} , Thidarat Supasai ₃ , Youyong Li ₄ , I-Ming Tang ₅ , Nopporn Rujisamphan _{1,

2}

Affiliation

To analyze the dominant recombination, researchers often consider the diode ideality factor (n_id), determined from the fitting of a semi‐log plot of light intensity–dependent open‐circuit voltage (V_oc(lnI/I₀)) to a linear dependence. This value is called “n_id,Voc”. Theoretically, n_id is the exponential dependence factor in the recombination rate function of the split of quasi‐Fermi levels. This n_id is called “n_id,C”. Herein, correlations between n_id,Voc, n_id,C, and the dominant recombination are reconsidered using a validated numerical drift–diffusion model and a diode current analysis in perovskite solar cell devices having accumulations of charged defects near the carrier transporting interfaces. It is found that the interplay between the recombination processes affects the linearity of the V_oc(lnI/I₀) plots. Devices having a single dominant recombination process exhibit V_oc(lnI/I₀) plots that appear to be linear, resulting in n_id,Voc ≈ n_id,C of the dominant recombination. Conversely, bends in the V_oc(lnI/I₀) curves indicate that different (multiple) recombination mechanisms dominate at different light intensities, so n_id,Voc is an effective n_id of the total diode current whose value is not consistent with any n_id,C values. This work provides more understanding of n_id and how to interpret a V_oc(lnI/I₀) curve more correctly for the insights into recombination mechanisms.

中文翻译：

平面钙钛矿太阳能电池中依赖于光强度的开路电压和理想因子来洞察重组过程

为了分析主要的重组，研究人员通常考虑二极管理想因子（n _id），该理想因子由光强度相关的开路电压（V _oc（ln I / I ₀））的半对数图拟合得出。线性相关性。该值称为“ n _id，Voc ”。从理论上讲，n _id是准费米能级分裂的复合率函数中的指数依赖性因子。该n _id被称为“ n _id，C ”。这里，n _id，Voc，n _id，C之间的相关性在钙钛矿型太阳能电池器件中，在载流子传输界面附近堆积了带电缺陷，并使用经过验证的数值漂移扩散模型和二极管电流分析，重新考虑了主导重组。发现重组过程之间的相互作用影响了V _oc（ln I / I ₀）图的线性。具有单个主导重组过程呈现设备V _OC（LN I / I ₀），似乎是线性的，从而导致图Ñ _{ID，开路电压} ≈ Ñ _ID，C的主导重组。相反，在V _oc（ln I / I₀）曲线表明，不同的（多种）复合机制在不同的光强度下起主导作用，因此n _id，Voc是总二极管电流的有效n _id，其值与任何n _id，C值都不一致。这项工作提供了对n _id的更多了解，以及如何更正确地解释V _oc（lnI / I ₀）曲线，以深入了解重组机制。

更新日期：2020-01-30

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