Being able to electrically manipulate the magnetic properties in recently discovered van der Waals ferromagnets is essential for their integration in future spintronics devices. Here, the magnetization of a semiconducting 2D ferromagnet, i.e., Cr2 Ge2 Te6 , is studied using the anomalous Hall effect in Cr2 Ge2 Te6 /tantalum heterostructures. The thinner the flakes, hysteresis and remanence in the magnetization loop with out-of-plane magnetic fields become more prominent. In order to manipulate the magnetization in such thin flakes, a combination of an in-plane magnetic field and a charge current flowing through Ta-a heavy metal exhibiting giant spin Hall effect-is used. In the presence of in-plane fields of 20 mT, charge current densities as low as 5 × 105 A cm-2 are sufficient to switch the out-of-plane magnetization of Cr2 Ge2 Te6 . This finding highlights that current densities required for spin-orbit torque switching of Cr2 Ge2 Te6 are about two orders of magnitude lower than those required for switching nonlayered metallic ferromagnets such as CoFeB. The results presented here show the potential of 2D ferromagnets for low-power memory and logic applications.

中文翻译：

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半导体Van Der Waals铁磁体Cr2 Ge2 Te6的有效自旋轨道转矩切换。

能够对最近发现的范德华铁磁体的磁性能进行电操纵，对于将其集成到未来的自旋电子器件中至关重要。在此，使用Cr2 Ge2 Te6 /钽异质结构中的异常霍尔效应研究了2D半导体铁磁体Cr2 Ge2 Te6的磁化强度。在平面外磁场作用下，磁化回路中的薄片，磁滞和剩磁变得更薄。为了控制这种薄片中的磁化强度，使用了平面磁场和流过Ta（一种表现出巨大自旋霍尔效应的重金属）的充电电流的组合。在存在20 mT的面内场时，低至5×105 A cm-2的充电电流密度足以切换Cr2 Ge2 Te6的面外磁化强度。这一发现表明，Cr2 Ge2 Te6的自旋轨道转矩转换所需的电流密度比转换非分层金属铁磁体（例如CoFeB）所需的电流密度低约两个数量级。此处显示的结果表明了二维铁磁体在低功耗存储器和逻辑应用中的潜力。