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Resistive switching device based on SrTiO3/PVA hybrid composite thin film as active layer
Polymer ( IF 4.1 ) Pub Date : 2020-01-13 , DOI: 10.1016/j.polymer.2020.122183
Muhammad Asad Ullah Khalid , Soo Wan Kim , Jaewook Lee , Afaque Manzoor Soomro , Muhammad Muqeet Rehman , Byung-Gul Lee , Kyung Hyun Choi

Functional thin film of strontium titanate/polyvinyl alcohol (SrTiO3-PVA) hybrid nanocomposite was sandwiched between silver (Ag) electrodes for the application of resistive random access memory (RRAM). Bottom Ag electrodes were patterned using high resolution reverse offset printing system while the hybrid composite thin film and the top Ag electrode were deposited through electro-hydrodynamic (EHD) atomization and EHD patterning respectively. RRAM behavior of SrTiO3 memory device has not been reported on a flexible substrate due to its brittle nature therefore, in this study we have successfully evaluated its mechanical robustness by forming its nanocomposite with highly flexible PVA polymer. The fabricated device showed bipolar, rewritable and nonvolatile memory behavior at low operating voltage. The bistable resistive switching behavior had off/on ratio of ∼30, retention time of 8.64 ×104 s and electrical endurance of 500 operating cycles. The device illustrated mechanical robustness when subjected to 500 bend cycles and varying bending diameters.



中文翻译:

基于SrTiO 3 / PVA杂化复合薄膜作为有源层的电阻开关装置

钛酸锶/聚乙烯醇(SrTiO 3 -PVA)杂化纳米复合材料的功能薄膜被夹在银(Ag)电极之间,用于电阻式随机存取存储器(RRAM)的应用。使用高分辨率反向胶版印刷系统对底部Ag电极进行构图,而分别通过电液动力学(EHD)雾化和EHD构图沉积混合复合薄膜和顶部Ag电极。SrTiO 3的RRAM行为由于其脆性,尚未在柔性基板上报道过这种存储装置,因此,在本研究中,我们已通过与高柔性PVA聚合物形成纳米复合材料,成功评估了其机械强度。制成的器件在低工作电压下显示出双极性,可重写和非易失性存储性能。双稳态电阻开关行为的开/关比约为30,保持时间为8.64×10 4 s,电耐久性为500个工作周期。当经受500次弯曲循环和变化的弯曲直径时,该设备显示出机械强度。

更新日期:2020-01-13
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