Phosphorous doping in a MoSe₂ monolayer is achieved by co‐deposition of P, Se, and Mo during molecular‐beam epitaxy, as reported by Maohai Xie and co‐workers in article number 1900830. P atoms substitute Se in MoSe₂, acting as acceptors and causing a Fermi‐level shift. The doping level can be tuned by changing the P/Se flux ratio. For dopants of the group‐V elements, the binding energy becomes shallower with increasing atomic mass.

中文翻译：

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单层掺杂：MoSe2单层中掺杂的磷的浅受体（Adv。Electron。Mater。1/2020）

在摩西磷掺杂₂单层是通过分子束外延过程中P，Se和钼的共沉积来实现，如在摩西在文章编号1900830. P原子替代硒报道熊猫海解和同事₂，作为受体并引起费米能级转变。可以通过改变P / Se通量比来调整掺杂水平。对于V族元素的掺杂剂，结合能随着原子质量的增加而变浅。