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Monolayer Doping: A Shallow Acceptor of Phosphorous Doped in MoSe2 Monolayer (Adv. Electron. Mater. 1/2020)
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-01-13 , DOI: 10.1002/aelm.202070005
Yipu Xia , Junqiu Zhang , Zhoubin Yu , Yuanjun Jin , Hao Tian , Yue Feng , Bin Li , Wingkin Ho , Chang Liu , Hu Xu , Chuanhong Jin , Maohai Xie

Phosphorous doping in a MoSe2 monolayer is achieved by co‐deposition of P, Se, and Mo during molecular‐beam epitaxy, as reported by Maohai Xie and co‐workers in article number 1900830. P atoms substitute Se in MoSe2, acting as acceptors and causing a Fermi‐level shift. The doping level can be tuned by changing the P/Se flux ratio. For dopants of the group‐V elements, the binding energy becomes shallower with increasing atomic mass.
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中文翻译:

单层掺杂:MoSe2单层中掺杂的磷的浅受体(Adv。Electron。Mater。1/2020)

在摩西磷掺杂2单层是通过分子束外延过程中P,Se和钼的共沉积来实现,如在摩西在文章编号1900830. P原子替代硒报道熊猫海解和同事2,作为受体并引起费米能级转变。可以通过改变P / Se通量比来调整掺杂水平。对于V族元素的掺杂剂,结合能随着原子质量的增加而变浅。
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更新日期:2020-01-13
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