Low‐Power Phase Transition of Chalcogenide Glass Using Au Nanoparticle Plasmon Resonance,Advanced Optical Materials

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Low‐Power Phase Transition of Chalcogenide Glass Using Au Nanoparticle Plasmon Resonance
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2020-01-13 , DOI: 10.1002/adom.201901570
Tun Cao ₁ , Kuan Liu ₁ , Li Lu ₂ , Jianxun Liu ₃ , Yan Jun Liu ₃ , Kai Rong Qin ₁ , Hsiang Chen Chui ₁ , Robert E. Simpson ₂

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Chalcogenide materials are attractive for all‐photonic phase‐change memories owing to their large optical contrast between amorphous and crystalline structural phases. However, high‐power heating pulses are required to switch these structural phases, which can limit the cyclability. To reduce power, Au nanoparticles (NPs) are embedded in a typical chalcogenide phase‐change material, Ge₂Sb₂Te₅ (GST). Raman analysis shows that a GST film crystallizes at a low optical power of 2 mW, which is almost 10 times lower than that of materials not embedded with NPs. This lower power is owing to the enhanced light absorptance through the strongly localized surface plasmon resonance (LSPR) of the Au NPs. The Au NPs embedded in the GST film scatter light at λ = 587 nm, which is close to Au NP's LSPR of ≈535 nm. Laser light at 532 nm is used to measure Raman scattering from the Au–GST system. The Raman scattering is enhanced by a factor 12 compared with a bare GST film. This study indicates that the GST film–Au NP system is suitable for high‐speed, low‐power, phase‐change memory and for a new type of tunable surface‐enhanced Raman scattering substrate.

中文翻译：

利用金纳米粒子等离子体共振实现硫属化物玻璃的低功率相变

硫族化物材料由于在非晶和结晶结构相之间具有很大的光学对比度，因此对全光子相变存储器具有吸引力。但是，需要大功率加热脉冲来切换这些结构阶段，这可能会限制循环性。为了降低功率，将金纳米颗粒（NPs）嵌入典型的硫族化物相变材料Ge ₂ Sb ₂ Te _5中（GST）。拉曼分析表明，GST薄膜在2 mW的低光功率下会结晶，这几乎是未嵌入NP的材料的10倍。这种较低的功率归因于通过Au NPs的强局部表面等离子体激元共振（LSPR）增强的光吸收率。嵌入在GST薄膜中的Au NPs在λ= 587 nm处散射光，接近≈535nm的Au NP的LSPR。532 nm的激光用于测量Au-GST系统的拉曼散射。与裸GST膜相比，拉曼散射增强了12倍。这项研究表明，GST膜-Au NP系统适用于高速，低功率，相变存储器以及新型的可调表面增强拉曼散射基板。

更新日期：2020-03-20

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