当前位置: X-MOL 学术Adv. Opt. Mater. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Rational Design and Synthesis of Highly Luminescent Multinary Cu‐In‐Zn‐S Semiconductor Nanocrystals with Tailored Nanostructures
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2020-01-10 , DOI: 10.1002/adom.201901555
Zhenyang Liu 1 , Zhongyuan Guan 1 , Xu Li 2 , Aiwei Tang 1 , Feng Teng 1
Affiliation  

Multinary copper chalcogenide semiconductor nanocrystals (NCs) have achieved increased attention due to their lessened toxicity and compositional versatility as well as their outstanding optical properties and optoelectronic applications in light‐emitting diodes (LEDs) and solar cells. Herein, the synthesis of highly luminescent multinary Cu‐In‐Zn‐S semiconductor NCs with tailored nanostructures, which exhibit the best absolute photoluminescence quantum yield of 90%, is presented. The tailored nanostructures are realized through the variation of the dosage and injection speed of Zn precursors, which determine the balance between Zn2+ cation diffusion and ZnS shelling reaction. The depth profile measured using X‐ray photoelectron spectroscopy reveals the gradient distribution of Zn elements from core to surface in the samples synthesized using higher feeding amounts of Zn precursors in a one‐pot method, which favors the formation of a soft core/shell structure. Time‐resolved spectroscopic studies confirm that the inward diffusion of Zn2+ and overcoating of a ZnS shell could reduce the number of intrinsic internal or surface defects, finally inducing a near‐unity radiative decay of excitons in single recombination pathway. As a demonstration, the highly luminescent multinary Cu‐In‐Zn‐S semiconductor NCs are incorporated into LEDs and a white light‐emitting diode is accessed through a two‐component strategy.

中文翻译:

具有定制纳米结构的高发光多元Cu-In-Zn-S半导体纳米晶体的合理设计与合成

多元硫属硫化物半导体纳米晶体(NCs)由于其毒性降低,成分多功能性好,在发光二极管(LED)和太阳能电池中具有出色的光学性能和光电应用而倍受关注。本文介绍了具有定制纳米结构的高发光多元Cu-In-Zn-S半导体NC的合成,这些NC具有90%的最佳绝对光致发光量子产率。通过改变Zn前体的剂量和注入速度来实现定制的纳米结构,这决定了Zn 2+之间的平衡阳离子扩散和ZnS脱壳反应。使用X射线光电子能谱仪测量的深度分布揭示了在单锅法中使用较高进料量的Zn前体合成的样品中锌元素从核到表面的梯度分布,这有利于形成软核/壳结构。时间分辨光谱研究证实,Zn 2+的向内扩散和ZnS壳的覆盖可以减少固有的内部或表面缺陷的数量,最终在单个重组途径中引起激子的近统一辐射衰减。作为演示,将高发光多元Cu-In-Zn-S半导体NC集成到LED中,并通过两成分策略访问白色发光二极管。
更新日期:2020-03-20
down
wechat
bug