IEEE Microwave and Wireless Components Letters ( IF 2.374 ) Pub Date : 2019-11-28 , DOI: 10.1109/lmwc.2019.2952766
Paolo Valerio Testa; Corrado Carta; Frank Ellinger

This letter presents a vector-modulator phase shifter for low-power and broadband applications operating from 160 to 190 GHz. The component is implemented in a 130-nm SiGe BiCMOS technology featuring a maximum oscillation frequency of 450 GHz. Phase-control methods, inductive peaking, and circuit architecture minimize both the dissipated power ( $P~_{\text {dc}}$ ) for a given insertion loss (IL) and the silicon footprint of the component. A 360° control of the insertion phase is demonstrated for a root-mean-square (rms) IL of 5.5 dB, and a maximum rms error of 1 dB, when the power consumption is 12.4 mW. The core area of the circuit is 0.07 mm 2 . To the best knowledge of the authors, the presented solution achieves the smallest core area together with one of the lowest power consumptions for comparable IL among designs operating above 100 GHz in any fabrication process.

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