This letter presents a vector-modulator phase shifter for low-power and broadband applications operating from 160 to 190 GHz. The component is implemented in a 130-nm SiGe BiCMOS technology featuring a maximum oscillation frequency of 450 GHz. Phase-control methods, inductive peaking, and circuit architecture minimize both the dissipated power ( $P~_{\text {dc}}$ ) for a given insertion loss (IL) and the silicon footprint of the component. A 360° control of the insertion phase is demonstrated for a root-mean-square (rms) IL of 5.5 dB, and a maximum rms error of 1 dB, when the power consumption is 12.4 mW. The core area of the circuit is 0.07 mm2. To the best knowledge of the authors, the presented solution achieves the smallest core area together with one of the lowest power consumptions for comparable IL among designs operating above 100 GHz in any fabrication process.

中文翻译：

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用于低功耗应用的 160-190GHz 矢量调制器移相器

这封信展示了一种矢量调制器移相器，适用于 160 至 190 GHz 的低功耗和宽带应用。该组件采用 130 纳米 SiGe BiCMOS 技术实现，最大振荡频率为 450 GHz。相位控制方法、电感峰值和电路架构最大限度地减少了给定插入损耗 (IL) 的耗散功率 ($P~_{\text {dc}}$) 和组件的硅足迹。当功耗为 12.4 mW 时，插入相位的 360° 控制显示为 5.5 dB 的均方根 (rms) IL 和 1 dB 的最大 rms 误差。电路的核心面积为 0.07 mm2。据作者所知，