We would like to recorrect the error in Figure 2A,B. It occurred unintentionally during the collection and combining of the XRD data. Thus, the alternate data were used mistakenly in the submitted manuscript. The recorrected Figure 2A,B is provided below. Also, the corresponding discussion about the XRD results needs to be modified. Thus, the appropriate descriptions have been modified in the following paragraph. In addition, we noticed mistakes in the figure caption and x-axis of Figure 2C,D also; now we have rewritten the mixed caption. Figure 2. XRD pattern of (A) pristine MoSe₂ and Co-doped MoSe₂, and (B) [email protected]₂ nanocomposite. Raman spectra of (C) pristine MoSe₂ and Co doped MoSe₂, and (D) [email protected]₂ nanocomposite. Furthermore, the XRD and Raman analyses were performed for all prepared samples (CoMoSe₂, Co₂MoSe₂, Co₃MoSe₂, and Co₄MoSe₂) and the [email protected]₂ nanocomposite. Figure 2A demonstrates the XRD pattern of pristine MoSe₂ with diffraction peaks of (002), (004), (100), (103), (006), (105), (416), (110), (008), (112), and (114) at corresponding diffraction angles 13.56°, 27.65°, 31.50°, 37.97°, 42.00°, 45.17°, 47.40°, 56.14°, 56.93°, 58.05°, and 65.83°, respectively (JCPDS 29-0914).⁴⁰ Meanwhile, the XRD pattern of CoMoSe₂ shows a higher-intensity peak for the (002) plane at 11.38°, whereas the other diffraction peaks of CoMoSe₂ show very poor intensity. The observed diffraction pattern of CoMoSe₂ is perfectly matched to the thin layer of MoSe₂ as reported in the previous literature.⁸ Besides, no additional peaks were observed for CoSe₂. This strongly suggests that the Co dopant is effectively dilute and integrated into the atomic lattice of MoSe₂, without any impurities. As compared to CoMoSe₂, the XRD pattern of Co₂MoSe₂, Co₃MoSe₂, and Co₄MoSe₂ shows the gradually increasing number of diffraction peaks between 11.38° and 61.89° diffraction angles. It is strongly associated with the diffraction peaks of the bulk form of MoSe₂ as reported in the previous literature.⁴¹ Thus, it strongly suggests that the higher concentration of Co doping induces the transformation of the layer structure to bulk form. Figure 2B shows the XRD pattern of [email protected]₂ with higher intensity diffraction peaks for (002), (001), (004), (100), (103), (006), and (416), which are overlapping at the diffraction angle of 11.47°, 26.28°, 28.53°, 31.17°, 40.09°, and 47.80°, respectively. Herein, the presence of the (001) plane represents successful integration of GO nanosheets with the CoMoSe₂ layer. This article has not yet been cited by other publications. Figure 2. XRD pattern of (A) pristine MoSe₂ and Co-doped MoSe₂, and (B) [email protected]₂ nanocomposite. Raman spectra of (C) pristine MoSe₂ and Co doped MoSe₂, and (D) [email protected]₂ nanocomposite.

中文翻译：

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富含活性部位的1T相CoMoSe2集成的氧化石墨烯纳米复合材料的校正，可作为电化学传感器和储能应用中的高效电催化剂。

我们想重新纠正图2A，B中的错误。它是在XRD数据的收集和合并过程中无意发生的。因此，替代数据在提交的原稿中被错误地使用。下面提供了重新校正的图2A，B。此外，有关XRD结果的相应讨论也需要修改。因此，在以下段落中对适当的描述进行了修改。另外，我们注意到图2C，D的图形标题和x轴也有错误；现在我们重写了混合字幕。图2.（A）原始MoSe ₂和Co掺杂的MoSe ₂和（B）[受电子邮件保护的] ₂纳米复合材料的XRD图谱。（C）原始MoSe ₂和Co掺杂MoSe的拉曼光谱₂和（D）[受电子邮件保护] ₂纳米复合材料。此外，对所有制备的样品（CoMoSe ₂，Co ₂ MoSe ₂，Co ₃ MoSe ₂和Co ₄ MoSe ₂）和[电子邮件保护的] ₂纳米复合材料进行XRD和拉曼分析。图2A展示了原始MoSe ₂的XRD图谱，其衍射峰为（002），（004），（100），（103），（006），（105），（416），（110），（008）， （112）和（114）分别以相应的衍射角13.56°，27.65°，31.50°，37.97°，42.00°，45.17°，47.40°，56.14°，56.93°，58.05°和65.83°（JCPDS 29 -0914）。⁴⁰同时，CoMoSe ₂的XRD图谱显示在（11）38°处（002）平面具有更高的强度峰，而CoMoSe ₂的其他衍射峰则表现出非常差的强度。丛毛的所观察到的衍射图案₂完美匹配MOSE的薄层₂如在先前的文献中报道。⁸此外，未观察到CoSe _2的其他峰。这有力地表明，Co掺杂剂可以有效地稀释并整合到MoSe ₂的原子晶格中，而没有任何杂质。与CoMoSe ₂相比，Co ₂ MoSe ₂，Co ₃ MoSe的XRD图谱_在图2中，和Co ₄ MoSe ₂显示出在11.38°和61.89°之间的衍射峰的数量逐渐增加。如先前文献中所报道，它与MoSe ₂的体相的衍射峰强烈相关。⁴¹因此，有力地表明，较高浓度的Co掺杂会引起层结构转变为块状形式。图2B显示了[电子邮件保护] ₂的XRD模式（002），（001），（004），（100），（103），（006）和（416）具有更高强度的衍射峰，它们在11.47°，26.28°，28.53的衍射角处重叠°，31.17°，40.09°和47.80°。在此，（001）面的存在表示GO纳米片与CoMoSe ₂层的成功整合。本文尚未被其他出版物引用。图2.（A）原始MoSe ₂和Co掺杂的MoSe ₂和（B）[受电子邮件保护的] ₂纳米复合材料的XRD图谱。（C）原始MoSe ₂和Co掺杂的MoSe ₂和（D）[受电子邮件保护] ₂纳米复合材料的拉曼光谱。