The p-CuI/n-ZnO heterojunction photodetectors have been fabricated by thermal evaporation technique and pulsed laser deposition with a tubular furnace. The morphology, structure, and the light response performances of the device were investigated. The p-CuI/n-ZnO heterojunction photodetectors demonstrated a high on/off ratio of 5500, high peak responsivity of 0.235 A/W, and high specific detectivity of ${1.23} \times {{10}^{12}}\,\,{{\rm cmHz}^{1/2}}/{\rm W}$ at $ - {5}\,\,{\rm V}$ bias voltage under 385 nm light illumination. Furthermore, the p-CuI/n-ZnO heterojunction photodetectors exhibited excellent reproducibility and stability.

中文翻译：

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基于热蒸发CuI和脉冲激光沉积ZnO纳米线的增强型p-CuI / n-ZnO光电探测器

p-CuI / n-ZnO异质结光电探测器已经通过热蒸发技术和管状炉的脉冲激光沉积技术制成。研究了该器件的形态，结构和光响应性能。p-CuI / n-ZnO异质结光电探测器表现出5500的高开/关比，0.235 A / W的高峰值响应率和$ {1.23}乘以{{10} ^ {12}} \ ，在385 nm光照下，在$-{5} \，\，{\ rm V} $偏置电压下，\\ {{\ rm cmHz} ^ {1/2}} / {\ rm W} $。此外，p-CuI / n-ZnO异质结光电探测器具有出色的可重复性和稳定性。