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Enhanced p-CuI/n-ZnO photodetector based on thermal evaporated CuI and pulsed laser deposited ZnO nanowires
Optics Letters ( IF 3.866 ) Pub Date : 2020-01-13 , DOI: 10.1364/ol.382904
Songren Niu, Fengzhou Zhao, Yu Hang, Cheng Wang, Lianjie Xin, Menglong Zhang, Man Xu, Dengying Zhang, Xinbo Chu, and Lichun Zhang

The p-CuI/n-ZnO heterojunction photodetectors have been fabricated by thermal evaporation technique and pulsed laser deposition with a tubular furnace. The morphology, structure, and the light response performances of the device were investigated. The p-CuI/n-ZnO heterojunction photodetectors demonstrated a high on/off ratio of 5500, high peak responsivity of 0.235 A/W, and high specific detectivity of ${1.23} \times {{10}^{12}}\,\,{{\rm cmHz}^{1/2}}/{\rm W}$ at $ - {5}\,\,{\rm V}$ bias voltage under 385 nm light illumination. Furthermore, the p-CuI/n-ZnO heterojunction photodetectors exhibited excellent reproducibility and stability.
更新日期:2020-01-15

 

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