The high-speed performance ultraviolet (UV) detectors were successfully fabricated based on the ternary Mn_xZn_1-xS (0.2 ≤ x ≤ 0.4) thin films deposited by a simple spray pyrolysis method. The optoelectrical properties of the samples were modified by introducing the Mn impurities at high content to enhance the performance of UV detectors. Microstructural characteristics confirmed the well-incorporation of Mn²⁺ ions into the ZnS lattice having nanocrystalline nature with homogeneous surface and strong adherence to the substrates. The optical measurements revealed that at the higher Mn²⁺ concentration, the optical transmittance increased over 95 % in the visible to near-infrared regions. Compared to the pure ZnS, the values of bandgap energy were found to blue-shift about 0.14 eV due to both quantum confinement and Burstein-Moss theories. Meanwhile, the Urbach energy decreased dramatically, leading to a considerable reduction of the electron-phonon interaction. The photoluminescence (PL) spectra revealed that the PL emission intensity was enhanced by introducing excess charge carriers through increasing the Mn²⁺ concentration, which can improve the generation of electron-hole pairs in the alloys. The photoresponse characterization featured a tremendous photosensing and photoswitching for the fabricated UV detectors, in which an excellent UV-B responsivity and high visible rejection were observed for the devices. For the UV detector based on the Mn_0.4Zn_0.6S thin film, the current gain greatly improved over 4.5 times compared to the pure ZnS one. Likewise, the photoresponse speed of the samples was found to enhance over 5 times, considerably.

基于简单喷雾热解法沉积的三元Mn _x Zn _1-x S（0.2≤x≤0.4）薄膜成功地制造了高速性能紫外（UV）检测器。通过以高含量引入Mn杂质来修改样品的光电性能，以增强UV检测器的性能。微观结构特征证实了Mn ²⁺离子能很好地掺入具有纳米晶体性质，具有均匀表面和对基底的牢固附着力的ZnS晶格中。光学测量表明，在较高的Mn ^2+下在可见光到近红外区域，光透射率增加了95％以上。与纯ZnS相比，由于量子约束和Burstein-Moss理论，带隙能量的值蓝移约0.14 eV。同时，乌尔巴赫能量急剧下降，导致电子-声子相互作用大大降低。光致发光（PL）光谱表明，通过增加Mn ²⁺引入过量的电荷载流子可以提高PL的发射强度。浓度，可以改善合金中电子-空穴对的生成。光响应特性为制造的UV检测器提供了巨大的光敏和光开关特性，其中观察到的器件具有出色的UV-B响应度和高可见光抑制率。对于基于Mn _0.4 Zn _0.6 S薄膜的紫外线检测器，与纯ZnS相比，电流增益提高了4.5倍以上。同样，发现样品的光响应速度提高了5倍以上。