Ferromagnetism of two-dimensional (2D) materials mediated by strain engineering has been extensively studied in theoretical calculations. However, due to the difficulty of introducing strain into 2D materials, experimental research has always been a challenge. We have fabricated MoS2 thin films using polymer assisted deposition and have observed strain-induced ferromagnetism in buckled MoS2 films. After buckling, the saturated magnetization (Ms) of buckled films at 300 K (0.486 emu·g−1) is enhanced 7.5 times compared to that of flat films (0.065 emu·g−1), while the linear temperature coefficient (χT) of buckled MoS2 films for E12g mode of Raman spectra is reduced to one third. Our results suggest that biaxial tensile strain plays a significant role in modulating magnetism, which may provide a feasible way for the fabrication and study of strain-related spintronic devices.Ferromagnetism of two-dimensional (2D) materials mediated by strain engineering has been extensively studied in theoretical calculations. However, due to the difficulty of introducing strain into 2D materials, experimental research has always been a challenge. We have fabricated MoS2 thin films using polymer assisted deposition and have observed strain-induced ferromagnetism in buckled MoS2 films. After buckling, the saturated magnetization (Ms) of buckled films at 300 K (0.486 emu·g−1) is enhanced 7.5 times compared to that of flat films (0.065 emu·g−1), while the linear temperature coefficient (χT) of buckled MoS2 films for E12g mode of Raman spectra is reduced to one third. Our results suggest that biaxial tensile strain plays a significant role in modulating magnetism, which may provide a feasible way for the fabrication and study of strain-related spintronic devices.

中文翻译：

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应变二硫化钼薄膜中网扣介导的室温铁磁性

由应变工程介导的二维 (2D) 材料的铁磁性已在理论计算中得到广泛研究。然而，由于难以将应变引入二维材料，实验研究一直是一个挑战。我们已经使用聚合物辅助沉积制造了 MoS2 薄膜，并在屈曲的 MoS2 薄膜中观察到了应变诱导的铁磁性。屈曲后，屈曲薄膜在 300 K (0.486 emu·g−1) 下的饱和磁化强度 (Ms) 比平面薄膜 (0.065 emu·g−1) 提高 7.5 倍，而线性温度系数 (χT)用于拉曼光谱的 E12g 模式的屈曲 MoS2 薄膜的数量减少到三分之一。我们的结果表明双轴拉伸应变在调节磁性方面起着重要作用，这可能为应变相关自旋电子器件的制造和研究提供一种可行的方法。应变工程介导的二维（2D）材料的铁磁性在理论计算中得到了广泛的研究。然而，由于难以将应变引入二维材料，实验研究一直是一个挑战。我们已经使用聚合物辅助沉积制造了 MoS2 薄膜，并在屈曲的 MoS2 薄膜中观察到了应变诱导的铁磁性。屈曲后，屈曲薄膜在 300 K (0.486 emu·g−1) 下的饱和磁化强度 (Ms) 比平面薄膜 (0.065 emu·g−1) 提高 7.5 倍，而线性温度系数 (χT)用于拉曼光谱的 E12g 模式的屈曲 MoS2 薄膜的数量减少到三分之一。