We report on the molecular beam epitaxy and characterization of monolayer GaN embedded in N-polar AlN nanowire structures. Deep ultraviolet emission from 4.85 to 5.25 eV is measured by varying the AlN barrier thickness. Detailed optical measurements and direct correlation with first-principles calculations based on density functional and many-body perturbation theory suggest that charge carrier recombination occurs predominantly via excitons in the extremely confined monolayer GaN/AlN heterostructures, with exciton binding energy exceeding 200 meV. We have further demonstrated deep ultraviolet light-emitting diodes (LEDs) with the incorporation of single and double monolayer GaN, which operate at 238 and 270 nm, respectively. These unique deep ultraviolet LEDs exhibit highly stable emission and a small turn-on voltage around 5 V.We report on the molecular beam epitaxy and characterization of monolayer GaN embedded in N-polar AlN nanowire structures. Deep ultraviolet emission from 4.85 to 5.25 eV is measured by varying the AlN barrier thickness. Detailed optical measurements and direct correlation with first-principles calculations based on density functional and many-body perturbation theory suggest that charge carrier recombination occurs predominantly via excitons in the extremely confined monolayer GaN/AlN heterostructures, with exciton binding energy exceeding 200 meV. We have further demonstrated deep ultraviolet light-emitting diodes (LEDs) with the incorporation of single and double monolayer GaN, which operate at 238 and 270 nm, respectively. These unique deep ultraviolet LEDs exhibit highly stable emission and a small turn-on voltage around 5 V.

中文翻译：

---

单层氮化镓激子深紫外发光二极管

我们报告了嵌入在 N 极性 AlN 纳米线结构中的单层 GaN 的分子束外延和表征。4.85 到 5.25 eV 的深紫外发射是通过改变 AlN 势垒厚度来测量的。详细的光学测量以及与基于密度泛函和多体微扰理论的第一性原理计算的直接相关性表明，载流子复合主要通过极其受限的单层 GaN/AlN 异质结构中的激子发生，激子结合能超过 200 meV。我们进一步展示了掺入单层和双单层 GaN 的深紫外发光二极管 (LED)，它们分别在 238 和 270 nm 下工作。这些独特的深紫外 LED 具有高度稳定的发射和约 5 V 的小开启电压。我们报告了嵌入在 N 极性 AlN 纳米线结构中的单层 GaN 的分子束外延和表征。4.85 到 5.25 eV 的深紫外发射是通过改变 AlN 势垒厚度来测量的。详细的光学测量以及与基于密度泛函和多体微扰理论的第一性原理计算的直接相关性表明，载流子复合主要通过极其受限的单层 GaN/AlN 异质结构中的激子发生，激子结合能超过 200 meV。我们进一步展示了掺入单层和双单层 GaN 的深紫外发光二极管 (LED)，它们分别在 238 和 270 nm 下工作。这些独特的深紫外 LED 具有高度稳定的发射和约 5 V 的小开启电压。