The current-voltage characteristics of resistive random-access memory cells with Ti/Pr0.7Ca0.3MnO3−δ (PCMO)/Pt stack structures were investigated. The PCMO layer on Pt had a mixed polycrystalline and amorphous structure. The cells displayed interface-type and filament-type resistive switching (RS) depending on the PCMO layer thickness. The interface-type RS was attributed to the migration of oxygen ions, which caused a redox reaction at the Ti/PCMO interface and the formation of a TiOx layer. For filament-type RS, a forming process occurred and this indicated the formation of a conductive filament in the PCMO layer. After forming, the cells showed bipolar and continuous RS similar to interface-type RS. This indicated that both the formation of a conductive filament in the PCMO layer and the redox reaction at the Ti/PCMO interface occur in the same cell. Finally, a qualitative model for the observed RS phenomenon is discussed based on conventional interface-type RS.The current-voltage characteristics of resistive random-access memory cells with Ti/Pr0.7Ca0.3MnO3−δ (PCMO)/Pt stack structures were investigated. The PCMO layer on Pt had a mixed polycrystalline and amorphous structure. The cells displayed interface-type and filament-type resistive switching (RS) depending on the PCMO layer thickness. The interface-type RS was attributed to the migration of oxygen ions, which caused a redox reaction at the Ti/PCMO interface and the formation of a TiOx layer. For filament-type RS, a forming process occurred and this indicated the formation of a conductive filament in the PCMO layer. After forming, the cells showed bipolar and continuous RS similar to interface-type RS. This indicated that both the formation of a conductive filament in the PCMO layer and the redox reaction at the Ti/PCMO interface occur in the same cell. Finally, a qualitative model for the observed RS phenomenon is discussed based on conventional interface-type RS.

中文翻译：

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在 Ti/Pr0.7Ca0.3MnO3−δ/Pt ReRAM 单元中表现出灯丝型和界面型开关的独特电阻开关现象

研究了具有 Ti/Pr0.7Ca0.3MnO3-δ (PCMO)/Pt 堆叠结构的电阻式随机存取存储器单元的电流-电压特性。Pt 上的 PCMO 层具有混合的多晶和非晶结构。根据 PCMO 层厚度，电池显示界面型和灯丝型电阻开关 (RS)。界面型RS归因于氧离子的迁移，导致Ti/PCMO界面发生氧化还原反应并形成TiOx层。对于细丝型 RS，发生了形成过程，这表明在 PCMO 层中形成了导电细丝。形成后，细胞表现出类似于界面型RS的双极性和连续RS。这表明 PCMO 层中导电丝的形成和 Ti/PCMO 界面处的氧化还原反应发生在同一个电池中。最后，基于常规界面型 RS 讨论了观察到的 RS 现象的定性模型。 具有 Ti/Pr0.7Ca0.3MnO3−δ (PCMO)/Pt 堆叠结构的电阻式随机存取存储单元的电流-电压特性是调查。Pt 上的 PCMO 层具有混合的多晶和非晶结构。根据 PCMO 层厚度，电池显示界面型和灯丝型电阻开关 (RS)。界面型RS归因于氧离子的迁移，导致Ti/PCMO界面发生氧化还原反应并形成TiOx层。对于灯丝型 RS，发生了形成过程，这表明在 PCMO 层中形成了导电细丝。形成后，细胞表现出类似于界面型RS的双极性和连续RS。这表明 PCMO 层中导电丝的形成和 Ti/PCMO 界面处的氧化还原反应发生在同一个电池中。最后，在常规界面型 RS 的基础上讨论了观测到的 RS 现象的定性模型。