The possibility of a controlled decrease in the effective height of the Schottky (Mott) barrier to the AlGaN/GaN (Ga-face polarity) heterostructure due to the modification of the shape of the barrier by the electric field of the polarization charge arising in the plane of the heterojunction because of the jump in electric polarization is experimentally shown. A decrease in the effective barrier height is related to an increase in the role of electron tunneling through the barrier. The effective barrier height can be controlled by varying the thickness and chemical composition of the AlGaN layer and choosing the metal of the barrier contact. Test low-barrier Mott Ti/AlGaN/GaN diodes demonstrating high values of the ampere-watt sensitivity (9 A/W) for a low specific differential resistance (4 × 10–4 Ω⋅cm2) at zero bias have been manufactured.

中文翻译：

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具有近表面极化诱导 δ 掺杂的低势垒莫特二极管

肖特基（莫特）势垒到 AlGaN/GaN（Ga 面极性）异质结构的有效高度的可控性降低的可能性，因为势垒的形状通过在实验显示了由于电极化跃迁导致的异质结平面。有效势垒高度的降低与电子隧穿势垒的作用增加有关。有效势垒高度可以通过改变 AlGaN 层的厚度和化学成分以及选择势垒接触的金属来控制。测试低势垒 Mott Ti/AlGaN/GaN 二极管已制造出在零偏压下具有低特定差分电阻 (4 × 10–4 Ω⋅cm2) 的高安培-瓦灵敏度 (9 A/W) 值。