In this work, characteristics of highly oriented Hf0.5Zr0.5O2 (HZO) thin-film resistive memory devices are investigated. The x-ray diffraction analysis indicates that the (−111) plane is the preferred orientation of HZO films, which is consistent with the prediction of two-dimensional crystal nucleus theory. Compared with semirandom HZO thin-film devices, the highly oriented (−111) HZO film exhibits excellent resistive switching behavior and superior retention time of up to 105 s with negligible performance degradation. Besides, highly oriented (−111) HZO films show a lower threshold of switching voltage, faster response time, and multilevel storage capability. Furthermore, the highly oriented (−111) HZO films can achieve better biosynaptic functions and plasticity. This study reveals that controlling the orientation of HZO thin films can promote and facilitate high-quality resistive memory devices.In this work, characteristics of highly oriented Hf0.5Zr0.5O2 (HZO) thin-film resistive memory devices are investigated. The x-ray diffraction analysis indicates that the (−111) plane is the preferred orientation of HZO films, which is consistent with the prediction of two-dimensional crystal nucleus theory. Compared with semirandom HZO thin-film devices, the highly oriented (−111) HZO film exhibits excellent resistive switching behavior and superior retention time of up to 105 s with negligible performance degradation. Besides, highly oriented (−111) HZO films show a lower threshold of switching voltage, faster response time, and multilevel storage capability. Furthermore, the highly oriented (−111) HZO films can achieve better biosynaptic functions and plasticity. This study reveals that controlling the orientation of HZO thin films can promote and facilitate high-quality resistive memory devices.

中文翻译：

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高取向 Hf0.5Zr0.5O2 薄膜电阻存储器件的特性研究

在这项工作中，研究了高度取向的 Hf0.5Zr0.5O2 (HZO) 薄膜电阻存储器件的特性。X射线衍射分析表明(-111)面是HZO薄膜的择优取向，这与二维晶核理论的预测一致。与半随机 HZO 薄膜器件相比，高度取向的 (-111) HZO 薄膜表现出优异的电阻切换行为和长达 105 秒的出色保留时间，性能下降可忽略不计。此外，高度取向的 (-111) HZO 薄膜显示出更低的开关电压阈值、更快的响应时间和多级存储能力。此外，高度取向的 (-111) HZO 薄膜可以实现更好的生物突触功能和可塑性。这项研究表明控制HZO薄膜的取向可以促进和促进高质量的电阻存储器件。本工作研究了高度取向的Hf0.5Zr0.5O2（HZO）薄膜电阻存储器件的特性。X射线衍射分析表明(-111)面是HZO薄膜的择优取向，这与二维晶核理论的预测一致。与半随机 HZO 薄膜器件相比，高度取向的 (-111) HZO 薄膜表现出优异的电阻切换行为和长达 105 秒的出色保留时间，性能下降可忽略不计。此外，高度取向的 (-111) HZO 薄膜显示出更低的开关电压阈值、更快的响应时间和多级存储能力。此外，高度取向的 (-111) HZO 薄膜可以实现更好的生物突触功能和可塑性。这项研究表明，控制 HZO 薄膜的取向可以促进和促进高质量的电阻存储器件。