当前位置: X-MOL 学术Appl. Phys. Lett. › 论文详情
Characteristic investigation of highly oriented Hf0.5Zr0.5O2thin-film resistive memory devices
Applied Physics Letters ( IF 3.597 ) Pub Date : 2020-01-06 , DOI: 10.1063/1.5141132
Xiaobing Yan, Zuoao Xiao, Chao Lu

In this work, characteristics of highly oriented Hf0.5Zr0.5O2 (HZO) thin-film resistive memory devices are investigated. The x-ray diffraction analysis indicates that the (−111) plane is the preferred orientation of HZO films, which is consistent with the prediction of two-dimensional crystal nucleus theory. Compared with semirandom HZO thin-film devices, the highly oriented (−111) HZO film exhibits excellent resistive switching behavior and superior retention time of up to 105 s with negligible performance degradation. Besides, highly oriented (−111) HZO films show a lower threshold of switching voltage, faster response time, and multilevel storage capability. Furthermore, the highly oriented (−111) HZO films can achieve better biosynaptic functions and plasticity. This study reveals that controlling the orientation of HZO thin films can promote and facilitate high-quality resistive memory devices.
更新日期:2020-01-10

 

全部期刊列表>>
物理学研究前沿热点精选期刊推荐
chemistry
自然职位线上招聘会
欢迎报名注册2020量子在线大会
化学领域亟待解决的问题
材料学研究精选新
GIANT
ACS ES&T Engineering
ACS ES&T Water
ACS Publications填问卷
屿渡论文,编辑服务
阿拉丁试剂right
南昌大学
王辉
南方科技大学
彭小水
隐藏1h前已浏览文章
课题组网站
新版X-MOL期刊搜索和高级搜索功能介绍
ACS材料视界
天合科研
x-mol收录
赵延川
李霄羽
廖矿标
朱守非
试剂库存
down
wechat
bug