当前位置: X-MOL 学术Appl. Phys. Lett. › 论文详情
Characteristic investigation of highly oriented Hf0.5Zr0.5O2thin-film resistive memory devices
Applied Physics Letters ( IF 3.521 ) Pub Date : 2020-01-06 , DOI: 10.1063/1.5141132
Xiaobing Yan, Zuoao Xiao, Chao Lu

In this work, characteristics of highly oriented Hf0.5Zr0.5O2 (HZO) thin-film resistive memory devices are investigated. The x-ray diffraction analysis indicates that the (−111) plane is the preferred orientation of HZO films, which is consistent with the prediction of two-dimensional crystal nucleus theory. Compared with semirandom HZO thin-film devices, the highly oriented (−111) HZO film exhibits excellent resistive switching behavior and superior retention time of up to 105 s with negligible performance degradation. Besides, highly oriented (−111) HZO films show a lower threshold of switching voltage, faster response time, and multilevel storage capability. Furthermore, the highly oriented (−111) HZO films can achieve better biosynaptic functions and plasticity. This study reveals that controlling the orientation of HZO thin films can promote and facilitate high-quality resistive memory devices.
更新日期:2020-01-10

 

全部期刊列表>>
化学/材料学中国作者研究精选
Springer Nature 2019高下载量文章和章节
《科学报告》最新环境科学研究
ACS材料视界
自然科研论文编辑服务
中南大学国家杰青杨华明
剑桥大学-
中国科学院大学化学科学学院
材料化学和生物传感方向博士后招聘
课题组网站
X-MOL
北京大学分子工程苏南研究院
华东师范大学分子机器及功能材料
中山大学化学工程与技术学院
试剂库存
天合科研
down
wechat
bug