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Analysis and control of Cu6Sn5 preferred nucleation on single crystal (001)Cu
Materials Letters ( IF 3 ) Pub Date : 2020-04-01 , DOI: 10.1016/j.matlet.2020.127327
H.R. Ma , C. Dong , N. Zhao , Y.P. Wang , X.G. Li , H.T. Ma , J. Chen

Abstract Fully oriented-intermetallic interconnects (FOI) of high melting point and service performance have highly considerable potential application in the current generation of 3D electronic packaging. The primary process of fabrication of this structure is the Cu6Sn5 preferred nucleation. In this article, the orientations of 59 successive Cu6Sn5 grains along the radius of (0 0 1)Cu/Sn-3.0Ag solder interface were investigated. Finally, an analysis and control model of Cu6Sn5 preferred nucleation determined by chemical potential gradient of Cu migration was established and applied to address and manage the orientation growth of Cu6Sn5 under different reflow temperatures and solder compositions. The results pave the way for orientation controlling of interfacial intermetallics in 3D packaging technologies.

中文翻译:

Cu6Sn5在单晶(001)Cu上优先形核的分析与控制

摘要 具有高熔点和服务性能的全取向金属间互连(FOI)在当前一代 3D 电子封装中具有非常可观的潜在应用。这种结构的主要制造工艺是 Cu6Sn5 优先成核。本文研究了 59 个连续的 Cu6Sn5 晶粒沿 (0 0 1)Cu/Sn-3.0Ag 焊料界面半径的取向。最后,建立了由 Cu 迁移的化学势梯度确定的 Cu6Sn5 优先成核的分析和控制模型,并应用于解决和管理不同回流温度和焊料成分下 Cu6Sn5 的取向生长。该结果为 3D 封装技术中界面金属间化合物的取向控制铺平了道路。
更新日期:2020-04-01
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